Zobrazeno 1 - 7
of 7
pro vyhledávání: '"Jaeyeop Na"'
Publikováno v:
Energies, Vol 15, Iss 19, p 6960 (2022)
Built-in freewheeling diode metal–oxide–semiconductor field-effect transistors (MOSFETs) that ensure high performance and reliability at high voltages are crucial for chip integration. In this study, a 4H–SiC built-in MOS-channel diode MOSFET w
Externí odkaz:
https://doaj.org/article/af3e243ec2d243b7be53c78d1a3a8b9c
Publikováno v:
Energies, Vol 14, Iss 24, p 8582 (2021)
A 1.2 kV SiC MOSFET with an integrated heterojunction diode and p-shield region (IHP-MOSFET) was proposed and compared to a conventional SiC MOSFET (C-MOSFET) using numerical TCAD simulation. Due to the heterojunction diode (HJD) located at the mesa
Externí odkaz:
https://doaj.org/article/fb3538daf06b4d13aa0d3d283e07cbc6
Autor:
Jaeyeop Na, Kwansoo Kim
Publikováno v:
2023 International Conference on Electronics, Information, and Communication (ICEIC).
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::75424894d29381ed3e62366db26c80a6
https://doi.org/10.1109/iceic57457.2023.10049864
https://doi.org/10.1109/iceic57457.2023.10049864
Autor:
Jaeyeop Na, Kwangsoo Kim
Publikováno v:
Electronics; Volume 12; Issue 1; Pages: 92
This study proposed a novel 4H-SiC double trench metal-oxide-semiconductor field-effect-transistor (DTMCD-MOSFET) structure with a built-in MOS channel diode. Further, its characteristics were analyzed using TCAD simulation. The DTMCD-MOSFET comprise
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::8055ff335c9d871b225da5208e86b707
Autor:
Jaeyeop Na, Kwansoo Kim
Publikováno v:
2022 International Conference on Electronics, Information, and Communication (ICEIC).
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b7a262eee1568b29b2ef6560984b9cb5
https://doi.org/10.1109/iceic54506.2022.9748589
https://doi.org/10.1109/iceic54506.2022.9748589
Publikováno v:
Materials
Materials, Vol 14, Iss 3554, p 3554 (2021)
Volume 14
Issue 13
Materials, Vol 14, Iss 3554, p 3554 (2021)
Volume 14
Issue 13
In this paper, a novel 4H-SiC split heterojunction gate double trench metal-oxide-semiconductor field-effect transistor (SHG-DTMOS) is proposed to improve switching speed and loss. The device modifies the split gate double trench MOSFET (SG-DTMOS) by
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::108d421b988e66c59ccc6cce905ccc03
http://europepmc.org/articles/PMC8269547
http://europepmc.org/articles/PMC8269547
Publikováno v:
Semiconductor Science and Technology. 37:045004
In this study, we investigated a 4H-SiC deep source trench metal-oxide semiconductor field-effect transistor (DST-MOSFET) using technology computer-aided design numerical simulations. The proposed DST-MOSFET comprises a P-pillar formed along with the
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f7ca81e32f1193c509c9ad9bd82f0faa
https://doi.org/10.1088/1361-6641/ac5103
https://doi.org/10.1088/1361-6641/ac5103