Zobrazeno 1 - 10
of 20
pro vyhledávání: '"Jaewan Lim"'
Autor:
Jun-Sik Yoon, Jinsu Jeong, Seunghwan Lee, Junjong Lee, Sanguk Lee, Jaewan Lim, Rock-Hyun Baek
Publikováno v:
IEEE Access, Vol 10, Pp 22032-22037 (2022)
Grain boundary (GB) at the source/drain (S/D) epitaxy was investigated using fully-calibrated TCAD. Because the S/D epi is grown separately at the bottom and the NS channels, nanosheet field-effect transistors (NSFETs) have unwanted GB within the S/D
Externí odkaz:
https://doaj.org/article/376710b9e59a43abb680aeff5772f010
Autor:
Sanguk Lee, Jinsu Jeong, Bohyeon Kang, Seunghwan Lee, Junjong Lee, Jaewan Lim, Hyeonjun Hwang, Sungmin Ahn, Rockhyun Baek
Publikováno v:
Nanomaterials, Vol 13, Iss 5, p 868 (2023)
This study proposed a novel source/drain (S/D) extension scheme to increase the stress in nanosheet (NS) field-effect transistors (NSFETs) and investigated the scheme by using technology-computer-aided-design simulations. In three-dimensional integra
Externí odkaz:
https://doaj.org/article/61d55a28f66f47afb16870e9f1c43fd0
Publikováno v:
JMIR Mental Health, Vol 8, Iss 12, p e31633 (2021)
BackgroundMobile mental health systems (MMHS) have been increasingly developed and deployed in support of monitoring, management, and intervention with regard to patients with mental disorders. However, many of these systems rely on patient data coll
Externí odkaz:
https://doaj.org/article/135db1b77f504cb4bf8e17300bae39b0
Autor:
Sanguk Lee, Jinsu Jeong, Jun-Sik Yoon, Seunghwan Lee, Junjong Lee, Jaewan Lim, Rock-Hyun Baek
Publikováno v:
Nanomaterials, Vol 12, Iss 19, p 3349 (2022)
The inner spacer thickness (TIS) variations in sub-3-nm, node 3-stacked, nanosheet field-effect transistors (NSFETs) were investigated using computer-aided design simulation technology. Inner spacer formation requires a high selectivity of SiGe to Si
Externí odkaz:
https://doaj.org/article/eae37ed1f5aa4f5a8b48820cafb824ed
Autor:
Seunghwan Lee, Jun-Sik Yoon, Junjong Lee, Jinsu Jeong, Hyeok Yun, Jaewan Lim, Sanguk Lee, Rock-Hyun Baek
Publikováno v:
Nanomaterials, Vol 12, Iss 10, p 1721 (2022)
In this study, threshold voltage (Vth) variability was investigated in silicon nanowire field-effect transistors (SNWFETs) with short gate-lengths of 15–22 nm and various channel diameters (DNW) of 7, 9, and 12 nm. Linear slope and nonzero y-interc
Externí odkaz:
https://doaj.org/article/c9aef8cbfc3f432f809b3c835be24426
Publikováno v:
IEEE Transactions on Electron Devices. 69:7096-7101
Publikováno v:
2023 7th IEEE Electron Devices Technology & Manufacturing Conference (EDTM).
Autor:
Sanguk Lee, Jinsu Jeong, Jun-Sik Yoon, Seunghwan Lee Baek, Junjong Lee, Jaewan Lim, Rock-Hyun Baek
Publikováno v:
2023 7th IEEE Electron Devices Technology & Manufacturing Conference (EDTM).
Autor:
Ock Taeck Lim, Jaewan Lim
Publikováno v:
Transctions of the Korean Hydrogen and New Energy Society. 31:499-508
Publikováno v:
2021 IEEE International Conference on Intelligence and Security Informatics (ISI).