Zobrazeno 1 - 10
of 25
pro vyhledávání: '"Jaewan Chang"'
Autor:
HanJin Lim, Jae Hyoung Choi, Gihee Cho, Jaewan Chang, Younsoo Kim, Hyung‐Suk Jung, Kyoung‐Sub Shin, Hyungtak Seo, Hyeongtag Jeon
Publikováno v:
Advanced Materials Technologies. :2200412
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b12760c36ef097f351f871168c06724a
https://doi.org/10.1002/admt.202200412
https://doi.org/10.1002/admt.202200412
Autor:
Younsoo Kim, Hyungtak Seo, Jaehyung Choi, Jaewan Chang, Sang Yeon Lee, Han-jin Lim, Hyeongtag Jeon
Publikováno v:
Current Applied Physics. 17:267-271
We report the Schottky barrier height (SBH) at metal–insulator interfaces in Pt/ZrO 2 –Al 2 O 3 –ZrO 2 (ZAZ)/TiN dynamic random access memory capacitors by analyzing the photoconductivity yield and internal photoemission (IPE) yield using IPE s
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::dba0b5d59aa9330b43b4962cdf17db39
https://doi.org/10.1016/j.cap.2016.12.004
https://doi.org/10.1016/j.cap.2016.12.004
Autor:
Pešić, Milan, Knebel, Steve, Geyer, Maximilian, Schmelzer, Sebastian, Böttger, Ulrich, Kolomiiets, Nadiia, Afanas'ev, Valeri V., Kyuho Cho, Changhwa Jung, Jaewan Chang, Hanjin Lim, Mikolajick, Thomas, Schroeder, Uwe
Publikováno v:
Journal of Applied Physics; 2/14/2016, Vol. 119 Issue 6, p1-5, 5p, 1 Diagram, 1 Chart, 5 Graphs
Autor:
Woochool Jang, Jaewan Chang, Heeyoung Jeon, Hyungtak Seo, Hyoseok Song, Changhee Shin, Seokyoon Shin, Joo Hyun Park, Younsoo Kim, Jae Hyoung Choi, Han-jin Lim, Hyeongtag Jeon
Publikováno v:
Thin Solid Films. 619:317-322
In this study, we report the effect of process conditions on the crystallinity and energy band structure of atomic layer deposition (ALD) ZrO2 films deposited, using tris(dimethylamino) cyclopentadienyl zirconium as a precursor and ozone as a reactan
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0a890e970c9b9152c1d1018638f0f53a
https://doi.org/10.1016/j.tsf.2016.10.044
https://doi.org/10.1016/j.tsf.2016.10.044
Autor:
Han-jin Lim, Milan Pešić, Uwe Schroeder, Nadiia Kolomiiets, Changhwa Jung, Steve Knebel, Valeri Afanas'ev, Kyu-Ho Cho, Jaewan Chang, Thomas Mikolajick
Publikováno v:
Solid-State Electronics. 115:133-139
DRAM capacitors are reaching the scaling limit and new approaches are necessary to enable further reduction of the physical thickness of the capacitor dielectric. The conduction band offset (CBO) of a platinum noble metal electrode on atomic layer de
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::761f98ad92efb651696b7b62086305f5
https://doi.org/10.1016/j.sse.2015.08.012
https://doi.org/10.1016/j.sse.2015.08.012
Autor:
Knebel, Steve, Pešić, Milan, Kyuho Cho, Jaewan Chang, Hanjin Lim, Kolomiiets, Nadiia, Afanas'ev, Valeri V., Muehle, Uwe, Schroeder, Uwe, Mikolajick, Thomas
Publikováno v:
Journal of Applied Physics; 6/14/2015, Vol. 117 Issue 22, p224102-1-224102-6, 6p, 2 Charts, 6 Graphs
Publikováno v:
Chemistry of Materials. 23:2693-2696
Ordered double perovskite Sr2FeRuO6 thin films were artificially fabricated by alternating growths of SrRuO3 and SrFeO3 unit atomic layers on atomically flat Ti4+-terminated SrTiO3 (111) substrates, thereby realizing ferromagnetism (or ferrimagnetism
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2088541cc3a5b18c5c9523b81ff33dc5
https://doi.org/10.1021/cm200454z
https://doi.org/10.1021/cm200454z
Publikováno v:
Journal of Crystal Growth. 311:3771-3774
We report on growth-mode transitions in the growth of SrRuO3 thin films on atomically flat Ti4+ single-terminated SrTiO3 (111) substrates, investigated by reflection high-energy electron diffraction and atomic force microscopy. Over the first ~9 unit
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::669c7efe39c442caf8893a823db48532
https://doi.org/10.1016/j.jcrysgro.2009.05.011
https://doi.org/10.1016/j.jcrysgro.2009.05.011
Autor:
Milan Pešić, Valeri Afanas'ev, Thomas Mikolajick, Steve Knebel, Han-jin Lim, Jaewan Chang, Uwe Muehle, Uwe Schroeder, Nadiia Kolomiiets, Kyu-Ho Cho
Aiming for improvement of the ZrO2-based insulator properties as compared to the state-of-the-art ZrO2/Al2O3/ZrO2 stacks beyond 20 nm dynamic random access memory (DRAM) technology applications, ultra-thin (5 nm) ZrO2/SrO/ZrO2 stacks with TiN electro
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::8d5672e1b89a4a989b5a4c0c85e2485a
https://lirias.kuleuven.be/handle/123456789/513912
https://lirias.kuleuven.be/handle/123456789/513912
Autor:
Milan Pešić, Steve Knebel, Thomas Mikolajick, Uwe Schroeder, Nadiia Kolomiiets, Valeri Afanas'ev, Kyu-Ho Cho, Han-jin Lim, Jaewan Chang, Changhwa Jung
Publikováno v:
EUROSOI-ULIS 2015: 2015 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon.
DRAM capacitors are reaching the scaling limit and new approaches are necessary to enable further reduction of the physical thickness of the capacitor dielectric. The Schottky Barrier Height (SBH) of a noble metal electrode (Pt) on atomic layer depos
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8e7fda86d9b23f9331cef38edf7adaad
https://doi.org/10.1109/ulis.2015.7063790
https://doi.org/10.1109/ulis.2015.7063790