Zobrazeno 1 - 10
of 26
pro vyhledávání: '"Jaesoo Ahn"'
Publikováno v:
IEEE Transactions on Electron Devices. 64:3639-3646
Magnetic tunnel junctions integrated for spin-transfer torque magnetoresistive random-access memory are by far the only known solid-state memory element that can realize a combination of fast read/write speed and high endurance. This paper presents a
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4247d72f2c529b3b07426d2ca824b0a9
https://doi.org/10.1109/ted.2017.2731959
https://doi.org/10.1109/ted.2017.2731959
Autor:
C. Ching, Mahendra Pakala, S. Kim, Lin Xue, Liang Shurong, Chando Park, Jimmy Kan, Seung H. Kang, A. Kontos, S. Hassan, Wang Rongjun, Mangesh Bangar, Jaesoo Ahn, H. Chen
Publikováno v:
IEEE Transactions on Magnetics. 53:1-4
This paper investigates the temperature-dependent behaviors of critical device parameters in 1 Gb perpendicular magnetic tunnel junction (pMTJ) arrays from 25 °C to 125 °C. Despite the fact that pMTJ (45-50 nm in diameter) attributes are generally
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5bc964a83a7b17a83fff74f84aa1f586
https://doi.org/10.1109/tmag.2016.2615816
https://doi.org/10.1109/tmag.2016.2615816
Autor:
Niranjan Khasgiwale, C. Ching, R. Zheng, W. Zhou, Jaesoo Ahn, R. Whig, W. Chen, Mahendra Pakala, P. Agrawal, S. Venkatanarayanan, Wang Rongjun, Todd Egan, Wang Xiaodong, D. Kim, J. Lei, Edward W. Budiarto, X. Tang, C. Zhou, K. Moraes, S. Kumar, Lin Xue, Hsin-Wei Tseng
Publikováno v:
2019 IEEE 11th International Memory Workshop (IMW).
There is a growing interest in using Spin Transfer Torque Magnetic Random-Access Memory (STT-MRAM) technology for SRAM replacement, particularly for Last Level Cache (LLC) applications. Besides LLC requirements of high performance of the MRAM cell, a
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::11cf5efc7c88fb50f0b8b367b91507c9
https://doi.org/10.1109/imw.2019.8739745
https://doi.org/10.1109/imw.2019.8739745
Publikováno v:
2018 IEEE Symposium on VLSI Technology.
The scaling of STT-MRAM for deeply scaled nodes (e.g. sub-10 nm CMOS) requires low resistance-area-product (RA) magnetic tunnel junctions (MTJs) to contain switching voltage (V c ) and to assure high endurance. In contrast to various reports, we demo
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2199c6bd21b19a65e748519298d1f5db
https://doi.org/10.1109/vlsit.2018.8510653
https://doi.org/10.1109/vlsit.2018.8510653
Autor:
H. Chen, Liang Shurong, Wang Rongjun, Hsin-Wei Tseng, S. Hassan, Mahendra Pakala, Mangesh Bangar, Lin Xue, C. Ching, Wang Xiaodong, Jaesoo Ahn, James Howarth, Renu Whig, A. Kontos
Publikováno v:
2018 IEEE Symposium on VLSI Technology.
This paper demonstrates systematic process optimization of perpendicular magnetic tunnel junction (pMTJ) by hardware, unit-process, and material stack design. TMR of 200% at RA 5 Ohm•µm2, H SAF ~ 8 kOe, and 10-time tunability of Hc were achieved a
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::256baf26d44eb110c8976cab4a9168c9
https://doi.org/10.1109/vlsit.2018.8510642
https://doi.org/10.1109/vlsit.2018.8510642
Publikováno v:
2018 IEEE International Memory Workshop (IMW).
Resistive memories such as STT-MRAM, RERAM and PCRAM use many elements, alloys and compounds that are not used in traditional semiconductor memory and even logic devices. Even newer FERAM materials based on doped HfOx, require optimizing crystal stru
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0164ee60ee32c4475014ee4aeed8dbce
https://doi.org/10.1109/imw.2018.8388840
https://doi.org/10.1109/imw.2018.8388840
Autor:
Yuan Taur, Dmitry Veksler, Paul C. McIntyre, A. Vais, Qian Xie, Hanping Chen, Jaesoo Ahn, Dennis Lin
Publikováno v:
IEEE Transactions on Electron Devices. 62:813-820
The distributed oxide trap model based on tunneling of carriers from the semiconductor surface is unified with the two-band Shockley–Read–Hall type of capture and emission model for interface states. The new model explains the often observed uptu
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a4fee429c3482fae855054c6f9b6d9c1
https://doi.org/10.1109/ted.2015.2389805
https://doi.org/10.1109/ted.2015.2389805
Publikováno v:
IEEE Transactions on Electron Devices. 60:3920-3924
Lumped- and distributed-circuit models for bulk-oxide traps are compared in terms of their fitting of p and n-type InGaAs MOS dispersion data. It is shown that the lumped-circuit model produces a distinct curvature in the capacitance versus log (freq
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0aead5866e4845c402d73f705738546f
https://doi.org/10.1109/ted.2013.2281298
https://doi.org/10.1109/ted.2013.2281298
Autor:
Jaesoo Ahn, Jimmy Kan, Lin Xue, A. Kontos, Seung H. Kang, Mangesh Bangar, S. Kim, H. Chen, Chando Park, S. Hassan, Wang Rongjun, C. Ching, Liang Shurong, Mahendra Pakala
Publikováno v:
2016 IEEE International Electron Devices Meeting (IEDM).
We present a comprehensive device and scalability validation of STT-MRAM for high performance applications in sub-10 nm CMOS by providing the first statistical account of barrier reliability in perpendicular magnetic tunnel junctions (pMTJs) from 70
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5fc6184c8b304399fc3b2efc8c23bbd2
https://doi.org/10.1109/iedm.2016.7838493
https://doi.org/10.1109/iedm.2016.7838493
Autor:
Hanping Chen, Yu Yuan, Peter M. Asbeck, Jaesoo Ahn, Mark J. W. Rodwell, Yuan Taur, Paul C. McIntyre, Bo Yu
Publikováno v:
IEEE Transactions on Electron Devices. 59:2383-2389
This paper presents a detailed analysis of the multifrequency capacitance–voltage and conductance–voltage data of $\hbox{Al}_{2}\hbox{O}_{3}/\hbox{n-InGaAs}$ MOS capacitors. It is shown that the widely varied frequency dependence of the data from
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::eec2b1584727aac3f9234def3521cf9b
https://doi.org/10.1109/ted.2012.2205255
https://doi.org/10.1109/ted.2012.2205255