Zobrazeno 1 - 6
of 6
pro vyhledávání: '"Jaeshin Cho"'
Autor:
Naresh C. Saha, Jaeshin Cho
Publikováno v:
Journal of Applied Physics. 74:7315-7320
We propose a new method of making heavily doped n‐type GaAs to a very shallow depth using sulfur hexafluoride (SF6) plasma treatment of the GaAs surface. Semi‐insulating GaAs substrate implanted with Si was exposed to a sulfur containing SF6 plas
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8d1675c6c8ef6b7c795d9b3892e13834
https://doi.org/10.1063/1.354998
https://doi.org/10.1063/1.354998
Publikováno v:
Journal of Applied Physics. 72:4172-4177
We have investigated the effect of oxygen plasma treatment on GaAs surface prior to plasma enhanced chemical vapor deposition of silicon nitride cap on the activation efficiency of implanted Si in GaAs. The oxygen plasma treatment improved the activa
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8d7e838f25b3ca460dceb51371171bac
https://doi.org/10.1063/1.352226
https://doi.org/10.1063/1.352226
Autor:
N. David Theodore, Jaeshin Cho
Publikováno v:
MRS Proceedings. 343
The electrical resistivity and microstructure of sputtered germanium film were characterized as a function of anneal temperature from 400 to 700°C. The as-deposited sputtered Ge film had an amorphous structure with resistivity of 165 Ω-cm which was
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5947c173ce5d29dca038125e120cbc6e
https://doi.org/10.1557/proc-343-715
https://doi.org/10.1557/proc-343-715
Autor:
Naresh C. Saha, Jaeshin Cho
Publikováno v:
MRS Proceedings. 343
We have studied the chemical stability of reactively sputtered aluminum nitride film with plasma-enhanced chemical vapor deposited SiO2 and SiNx films. It was found that the PECVD SiO2 film reacted with A1N to form aluminosilicate (3Al2O3·2SiO2) at
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d2a7f64c1ebde727d195f40e1f1eff02
https://doi.org/10.1557/proc-343-253
https://doi.org/10.1557/proc-343-253
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