Practical Evaluation Method of Oxygen Precipitation in the Czochralski Silicon

Autor: Jaehyeong, Anselmo, Hong, Sejun, Kim, Young, Kang, Bog, Lee, Wook

Publikováno v: ECS Transactions; August 2016, Vol. 75 Issue: 4 p69-76, 8p

Defect Formation of Nickel-Incorporated Large-Diameter Czochralski-Grown Silicon and Their Effect on Gate Oxide Reliability

Autor: Jaehyeong, Anselmo, Im, Seong, Kang, Bog, Lee, Wook

Publikováno v: ECS Journal of Solid State Science and Technology; January 2016, Vol. 5 Issue: 4 pP3008-P3012, 5p