Zobrazeno 1 - 10
of 13
pro vyhledávání: '"Jaehwan Oh"'
Publikováno v:
Applied Sciences, Vol 11, Iss 20, p 9759 (2021)
This paper presents a Pareto-based multi-objective optimization for operating CO2 sequestration with a multi-well system under geological uncertainty; the optimal well allocation, i.e., the optimal allocation of CO2 rates at injection wells, is obtai
Externí odkaz:
https://doaj.org/article/db3389387894424aacbb9f193bec91ba
Publikováno v:
Goldschmidt2022 abstracts.
Publikováno v:
Journal of the American College of Cardiology. 79:2960
Publikováno v:
Journal of the American College of Cardiology. 79:2414
Publikováno v:
Journal of the American College of Cardiology. 79:2454
Autor:
Nicholas Taklalsingh, Jeremy Jaehwan Oh, Ganesh Keshav Thirunavukkarasu, Seyed M. Zaidi, Dale Railwah, Jonathan D. Marmur, Alan Feit, Louis F. Salciccioli
Publikováno v:
Journal of the American College of Cardiology. 79:3005
Autor:
Aaron Douen, Jeremy Jaehwan Oh, Marc Sukhoo-Pertab, Samuel Tan, Carly Bowser, Madison Lindsey, Prakash Ramdass, Ofek Hai, George Juang, Aleksandre Toreli
Publikováno v:
Journal of the American College of Cardiology. 79:1485
Autor:
Jaehwan Oh, Robert J. Nemanich
Publikováno v:
Journal of Applied Physics. 92:3326-3331
Using conducting tip atomic force microscopy (c-AFM), we have measured the current–voltage (I–V) characteristics of individual submicron islands of TiSi2 on Si(100) surfaces, and we have developed an imaging approach that distinguishes the electr
Publikováno v:
Journal of Applied Physics. 92:3332-3337
Nanoscale TiSi2 islands are formed by electron beam deposition of a few monolayers of titanium on an atomically clean silicon surface followed by in situ annealing at high temperatures (800–1000 °C). The lateral diameter of typical islands are ∼
Publikováno v:
Journal of Applied Physics. 91:6081-6084
Spontaneous formation of titanium carbide nanoislands on silicon carbide substrates has been studied with scanning tunneling microscopy and x-ray absorption near-edge spectroscopy. Scratch-free and atomically flat 6H–SiC(0001)Si substrates were pre