Zobrazeno 1 - 10
of 38
pro vyhledávání: '"Jaeheon Shin"'
Autor:
Byung-Tai Kim, Jaeheon Shin
Publikováno v:
Current Applied Physics.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3a95f53210f248b26a8f9c12e9a3970c
https://doi.org/10.1016/j.cap.2019.09.012
https://doi.org/10.1016/j.cap.2019.09.012
Autor:
Jung-Hyung Kim, Jaeheon Shin, Yeong-Shin Kim, Chan-Hwa Hong, Shin-Jae You, Nae-Man Park, Kyung-Hyun Kim, Woo-Seok Cheong
Publikováno v:
Surface and Coatings Technology. 266:10-13
Indium-tin oxide (ITO) films were successfully grown at low temperatures by ionized physical vapor deposition (IPVD) method, equipped with an internal-type inductively coupled plasma reactor (ICP-reactor). Radio-frequency antenna for ICP was made by
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::359051a7ffbc805353b77b35aaab64f8
https://doi.org/10.1016/j.surfcoat.2015.02.003
https://doi.org/10.1016/j.surfcoat.2015.02.003
Autor:
Sung Mook Chung, Seung Jae Lee, Seung-Youl Kang, Young Jin Kim, Kyoung Ik Cho, Woo-Seok Cheong, Chi-Sun Hwang, Jaeheon Shin
Publikováno v:
Journal of Crystal Growth. 326:94-97
The effects of zinc on the zinc-doped CaTiO 3 :Pr 3+ phosphors have been investigated by varying the zinc concentrations from 0 to 100 mol%. The variation of zinc concentration influences the crystallinity and morphology of the phosphors. The crystal
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2c9fcff11168765186dcd12dd034339e
https://doi.org/10.1016/j.jcrysgro.2011.01.060
https://doi.org/10.1016/j.jcrysgro.2011.01.060
Publikováno v:
Thin Solid Films. 517:4094-4099
Indium–tin oxide (ITO) has been widely used as electrodes for LCDs and OLEDs. The applications are expanding to the transparent thin-film transistors (TTFT S ) for the versatile circuits or transparent displays. This paper is related with optimizat
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::eb36528b88bd9abac9e06325efa9b8d1
https://doi.org/10.1016/j.tsf.2009.01.181
https://doi.org/10.1016/j.tsf.2009.01.181
Autor:
Min-Ki Ryu, Min Suk Oh, Jaeheon Shin, Seongil Im, Kimoon Lee, Sang-Hee Ko Park, Shinhyuk Yang, Chun-Won Byun, Jeong Lk Lee, Chi-Sun Hwang
Publikováno v:
Advanced Materials. 21:678-682
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::340680190ea49c2fcb0f17deb0104a1f
https://doi.org/10.1002/adma.200801470
https://doi.org/10.1002/adma.200801470
Autor:
Cheol Seong Hwang, Shin Hyuk Yang, Min Ki Ryu, Doohyung Cho, Chun-Won Byun, Jeong-Ik Lee, Hye-Yong Chu, Jaeheon Shin
Publikováno v:
Journal of the Korean Physical Society. 54:531-534
We have studied transparent bottom-gate TFTs (thin film transistors) using amorphous IGZO (In-Ga-Zn-O) as an active channel material. The TFT devices had inverse co-planar structures. Source/drain and gate electrodes were constituted by ITO sputtered
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7c5a5d3a55fc27945790d44eeda6507d
https://doi.org/10.3938/jkps.54.531
https://doi.org/10.3938/jkps.54.531
Publikováno v:
Thin Solid Films. 516:8159-8164
We have investigated transparent thin-film transistors (TTFTs) with active channel of zinc oxide (ZnO) films, reactively grown by RF magnetron sputtering using metallic zinc target. According to the ratio of oxygen to the total gas (O 2 /(O 2 + Ar)),
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::da51b6cba26ce96364aa7b79f8e68a7c
https://doi.org/10.1016/j.tsf.2008.04.063
https://doi.org/10.1016/j.tsf.2008.04.063
Autor:
Jae-Hong Jeon, Jong-Hyun Seo, Kang-Woong Lee, Jaeheon Shin, Chi-Sun Hwang, HeeHwan Choe, Sang-Hee Ko Park
Publikováno v:
Journal of the Korean Physical Society. 53:412-415
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::36a64aa5cf6ead22bd8614bcdc40716c
https://doi.org/10.3938/jkps.53.412
https://doi.org/10.3938/jkps.53.412
Publikováno v:
Electronic Materials Letters. 9:467-469
A transparent non-volatile memory device was fabricated using silicon quantum dots in silicon nitride film as a gate insulator. A silicon quantum dots were grown in-situ in the film by plasma-enhanced chemical vapor deposition. The silicon quantum do
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::fd5c48ba3d59360cf3e329ab2b1d529d
https://doi.org/10.1007/s13391-013-0028-y
https://doi.org/10.1007/s13391-013-0028-y
Publikováno v:
Thin Solid Films. 520:3800-3802
We demonstrate that the voltage-dependent average mobility of In–Ga–Zn–O (IGZO) thin-film transistors (TFTs) can be excellently fitted by an empirical mobility function based on the exponential density of deep and tail states. The proposed mobi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9286bf8dfc622aea8cac7c8421a8d837
https://doi.org/10.1016/j.tsf.2011.06.088
https://doi.org/10.1016/j.tsf.2011.06.088