Zobrazeno 1 - 3
of 3
pro vyhledávání: '"Jaedoeg Yu"'
Autor:
Jaedoeg Yu, Kyung-Tae Kang, Jin-Yup Lee, Hyung-Gon Kim, Doo-Sub Lee, Jeong-Don Ihm, Young-Sun Min, An-Soo Park, Chulbum Kim, Jinho Ryu, Dongku Kang, Pansuk Kwak, Doohyun Kim, Kyung-Min Kang, Sung-Yeon Lee, Yong Sung Cho, Moosung Kim, Wandong Kim, Lee Han-Jun, Cheon An Lee, In-Mo Kim, Bong-Kil Jung, Woopyo Jeong, Jae-Ick Son, Nayoung Choi, Ki-Tae Park, Kye-Hyun Kyung, Dae-Seok Byeon, Dong-Su Jang
Publikováno v:
IEEE Journal of Solid-State Circuits. 52:210-217
A 48 WL stacked 256-Gb V-NAND flash memory with a 3 b MLC technology is presented. Several vertical scale-down effects such as deteriorated WL loading and variations are discussed. To enhance performance, reverse read scheme and variable-pulse scheme
Autor:
Dae-Woon Kang, Chunan Lee, Jin-Yub Lee, Hyung-Gon Kim, Kitae Park, HyunWook Park, Moosung Kim, Sangki Hong, Sung-Hoon Lee, Kye-Hyun Kyung, Jeong-Don Ihm, In-Mo Kim, Inryul Lee, Ji-Young Lee, Ji-Sang Lee, Hyun-Jun Yoon, Seung-Hwan Song, Dongkyu Yoon, Young-don Choi, Yelim Kwon, Yong-Ha Park, Sung-Hoon Kim, Ji-Ho Cho, Jaedoeg Yu, Park Jiyoon, Doohyun Kim, Nayoung Choi, Nahyun Kim, Chulbum Kim, Pansuk Kwak, Hyun-Jin Kim, Jong-Hoon Lee, Woopyo Jeong, Hwajun Jang, Jonghoon Park, Byung-Hoon Jeong, Won-Tae Kim, Young-Sun Min, Yang-Lo Ahn, Ki-Sung Kim, Seung-Bum Kim, Dae-Seok Byeon, Jinbae Bang, Park Il-Han
Publikováno v:
ISSCC
The advent of emerging technologies such as cloud computing, big data, the internet of things and mobile computing is producing a tremendous amount of data. In the era of big data, storage devices with versatile characteristics are required for ultra
Autor:
Kye-Hyun Kyung, Pansuk Kwak, Jeong-Hyuk Choi, Jinho Ryu, Young-Sun Min, Nayoung Choi, Hyung-Gon Kim, Dae-Seok Byeon, Doohyun Kim, Jeong-Don Ihm, Hyang-ja Yang, Yong Sung Cho, Jaedoeg Yu, Dong-Su Jang, Kyung-Tae Kang, In-Mo Kim, Bong-Kil Jung, Wandong Kim, Kyung-Min Kang, Chulbum Kim, Dongku Kang, Kitae Park, Sung-Yeon Lee, Moosung Kim, Lee Han-Jun, Woopyo Jeong, An-Soo Park, Jae-Ick Son, Doo-gon Kim, Doo-Sub Lee
Publikováno v:
ISSCC
Today's explosive demand for data transfer is accelerating the development of non-volatile memory with even larger capacity and cheaper cost. Since the introduction of 3D technology in 2014 [1], V-NAND is believed to be a successful alternative to pl