Zobrazeno 1 - 8
of 8
pro vyhledávání: '"Jaedo, Pyeon"'
Autor:
Byeongchan So, Kyungbae Lee, Kyungjae Lee, Cheon Heo, Jaedo Pyeon, Kwangse Ko, Jongjin Jang, Okhyun Nam
Publikováno v:
Journal of Nanoscience and Nanotechnology. 16:4914-4918
This study investigated GaN epitaxial layer growth with a conductive Al(x)Ga(1-x)N buffer layer on n-type 4H-SiC by high-temperature metalorganic chemical vapor deposition (HT-MOCVD). The Al composition of the Al(x)Ga(1-x)N buffer was varied from 0%
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::fd2c8980ab0a62e319c3b034578392e7
https://doi.org/10.1166/jnn.2016.12256
https://doi.org/10.1166/jnn.2016.12256
Publikováno v:
Journal of Nanoscience and Nanotechnology. 15:8401-8406
In this study, we suggest a polarity-selective in-situ thermal etching and re-growth process for the fabrication of high quality Al terminated AIN epilayers by high temperature metalorganic chemical vapor deposition. Mixed-polar AIN layers grown on a
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::93ad65ecf8ff0d702399cb5757363ab4
https://doi.org/10.1166/jnn.2015.11446
https://doi.org/10.1166/jnn.2015.11446
Publikováno v:
Journal of Nanoscience and Nanotechnology. 15:5144-5147
This study investigates the crystallographic polarity transition of AIN layers grown by high temperature metalorganic chemical vapor deposition (HT-MOCVD), with varying trimethylaluminum (TMAI) pre-flow rates. AIN layers grown without TMAI pre-flow h
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::90ff695438abe30fcc7769be14594bc5
https://doi.org/10.1166/jnn.2015.10368
https://doi.org/10.1166/jnn.2015.10368
Publikováno v:
Scientific Reports
Scientific Reports, Vol 8, Iss 1, Pp 1-10 (2018)
Scientific reports, 8, Art.-Nr.: 935
Scientific Reports, Vol 8, Iss 1, Pp 1-10 (2018)
Scientific reports, 8, Art.-Nr.: 935
We report deep ultraviolet (UVC) emitting core-shell-type AlGaN/AlN multiple quantum wells (MQWs) on the AlN nanorods which are prepared by catalyst/lithography free process. The MQWs are grown on AlN nanorods on a sapphire substrate by polarity-sele
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::08104bf983c7a85dc62e99a7fc8ce780
http://europepmc.org/articles/PMC5772499
http://europepmc.org/articles/PMC5772499
Autor:
Byeongchan, So, Kyungbae, Lee, Kyungjae, Lee, Cheon, Heo, Jaedo, Pyeon, Kwangse, Ko, Jongjin, Jang, Okhyun, Nam
Publikováno v:
Journal of nanoscience and nanotechnology. 16(5)
This study investigated GaN epitaxial layer growth with a conductive Al(x)Ga(1-x)N buffer layer on n-type 4H-SiC by high-temperature metalorganic chemical vapor deposition (HT-MOCVD). The Al composition of the Al(x)Ga(1-x)N buffer was varied from 0%
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=pmid________::df3e5bb304de643fbb35a28643d0c7ed
https://pubmed.ncbi.nlm.nih.gov/27483845
https://pubmed.ncbi.nlm.nih.gov/27483845
Publikováno v:
Japanese Journal of Applied Physics. 54:081001
This study reports on the growth and characterization of AlN/AlxGa1−xN superlattices (SLs) for reduction of threading dislocations to grow high quality AlN layer. Insertion of optimized SLs is shown to effectively reduce the dislocation density, th
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::81fde6c44eefa07feaf91deaed4ff723
https://doi.org/10.7567/jjap.54.081001
https://doi.org/10.7567/jjap.54.081001
Publikováno v:
Japanese Journal of Applied Physics. 54:051002
The self-compensation effect in Si-doped Al0.55Ga0.45N layers was investigated using different SiH4/III ratios. The degree of compressive strain changed with SiH4 flow rate during growth. With a low SiH4/III ratio of 2.46 × 10−6, compressive strai
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5164c6bed5ed0319f7595aa1982417e6
https://doi.org/10.7567/jjap.54.051002
https://doi.org/10.7567/jjap.54.051002
Publikováno v:
Japanese Journal of Applied Physics; May2015, Vol. 54 Issue 5, p1-1, 1p