Zobrazeno 1 - 4
of 4
pro vyhledávání: '"Jaechun Cha"'
Autor:
Anbae Lee, Il-Sik Jang, Sunny Hwang, Ahyoung Oh, Jongwon Park, Jihwan Park, Jaechun Cha, Hun-Sung Lee, Sungho Jo, Dong-Seok Kim, Cjay Cho, Se-Aug Jang, Sungki Park, Seung-Woo Jin, Seoungjin Yeom
Publikováno v:
2014 20th International Conference on Ion Implantation Technology (IIT).
We have investigated properties of Antimony implanted Si such as crystalline defect, dopant distribution, and sheet resistance before and after annealing using TEM, SIMS, and 4-point probe. The sheet resistance of Sb implanted Si shows 35% lower than
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::855ac3a0465dd782726765fee2acc9a3
https://doi.org/10.1109/iit.2014.6940047
https://doi.org/10.1109/iit.2014.6940047
Autor:
Seon-Yong Cha, Jaechun Cha, IlSic Jang, Seung-Woo Jin, ByounGyu Kim, HyoYoung Kang, Hyo Sang Kang, Anbae Lee, DongGoo Choi
Publikováno v:
AIP Conference Proceedings.
To make high performance sub 20nm DRAM peripheral transistor, new process approach in the ion implantation is strongly required. Main hurdles to meet the peripheral transistor's electrical requirement are Contact Resistance, Short Channel Effect and
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::31043811048c6a27a32aa01a868f0a55
https://doi.org/10.1063/1.4766480
https://doi.org/10.1063/1.4766480
Autor:
Anbae Lee, Seungwoo Jin, Younghwan Joo, Ilsik Jang, Jaechun Cha, Kichel Jeong, Hyosang Kang, Cjay Cho, Jeonghoon Jang, Sunny Hwang, Jiro Matsuo, Masataka Kase, Takaaki Aoki, Toshio Seki
Publikováno v:
AIP Conference Proceedings.
To extend current process, it is required develop new implantation method. One of promising candidates are carbon implant, cold implant, or cold carbon implantation. To improve transistor properties, we have evaluated those implantation methods in Li
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9dfb72f96d0e731097b04153fa583935
https://doi.org/10.1063/1.3548426
https://doi.org/10.1063/1.3548426
Autor:
Jaechun Cha, Seungwoo Jin, Anbae Lee, Hun-Sung Lee, Dongseok Kim, Jihwan Park, Ilsik Jang, Ahyoung Oh, Se-Aug Jang, Seoungjin Yeom, Sungki Park, Cjay Cho, Sunny Hwang, Jongwon Park, Sungho Jo
Publikováno v:
2014 20th International Conference on Ion Implantation Technology (IIT); 2014, p1-3, 3p