Zobrazeno 1 - 5
of 5
pro vyhledávání: '"Jaechul Om"'
Autor:
Youngseok Kwon, Jin-hyock Kim, Sujin Chae, Youngho Lee, Soo Gil Jachun, Jachun Ku, Yongsun Sohn, Sungki Park, Deuk-Sung Choi, Jaechul Om
Publikováno v:
Journal of the Korean Physical Society. 59:466-469
We investigated the influence of phase-change materials on the device performance for low-power and high-speed phase-change random access memory (PCRAM). The Ge-doped SbTe (Ge-ST) alloy was used as a phase-change material and was compared with the co
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::000077f48f3aa2c741d33a666e4a3f2b
https://doi.org/10.3938/jkps.59.466
https://doi.org/10.3938/jkps.59.466
Publikováno v:
Solid-State Electronics. 44:189-192
The dependence of Q BD on the combined post annealing conditions of RTA and FA in the tungsten polycide gate technology has been experimentally investigated. In the case of RTA to be processed after FA, Q BD is controlled by the amount of fluorine di
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c0140a21b562ddfe38f91c5ec9b7cb26
https://doi.org/10.1016/s0038-1101(99)00216-6
https://doi.org/10.1016/s0038-1101(99)00216-6
Autor:
Youngho Choe, Jongoh Kim, Sangcheol Kim, Jungyeol Park, Euikyu Ryou, Byunghak Lee, Dong-Chan Kim, Jaechul Om, Youngtag Woo, Taewoo Kim
Publikováno v:
ICVC '99. 6th International Conference on VLSI and CAD (Cat. No.99EX361).
The dependence of oxide charge-to-breakdown (Q/sub BD/) and device degradation on the combined post annealing of RTA and FA in the tungsten polycide gate technology have been experimentally investigated. The experimental results suggest that Q/sub BD
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3be605f7e624f283902ec12fd4a0a114
https://doi.org/10.1109/icvc.1999.820892
https://doi.org/10.1109/icvc.1999.820892
Autor:
Byunghak Lee, Sangcheol Kim, Dongchan Kim, Taewoo Kim, Jungyeol Park, Youngho Choe, Youngtag Woo, Euikyu Ryou, Jongoh Kim, Jaechul Om
Publikováno v:
ICVC '99 6th International Conference on VLSI & CAD (Cat No99EX361); 1999, p241-244, 4p
Autor:
Jong-Hun Kim, Hyunho Noh, Khim, Z. G., Kwang Sun Jeon, Young June Park, Hyunseung Yoo, Eunseok Choi, Jaechul Om
Publikováno v:
Applied Physics Letters; 3/31/2008, Vol. 92 Issue 13, p132901, 3p, 1 Black and White Photograph, 1 Diagram, 2 Graphs