Zobrazeno 1 - 10
of 10
pro vyhledávání: '"Jae-jong Han"'
Autor:
Seong-Hoon Jeong, Byoungdeog Choi, Bong-Hyun Kim, Jae-jong Han, Ho-kyun An, Kong-Soo Lee, Yoongoo Kang, Hyunho Park, Ho-Kyu Kang, Hongsik Jeong, Seok-Woo Nam, Chilhee Chung
Publikováno v:
ECS Transactions. 45:49-54
In this study, the enhancement of the silicon etch rate with the heavy doping of phosphorus and arsenic was studied during cyclic selective epitaxial growth process using batch-type equipment. The reaction between molecular chlorine and heavily doped
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::583291520cecf2a2438abdb7c56ce3f9
https://doi.org/10.1149/1.3700938
https://doi.org/10.1149/1.3700938
Autor:
Kwang Ryul Kim, Joo Tae Moon, Chang Jin Kang, Kong Soo Lee, Hongsik Jeong, Hyunho Park, Jae Jong Han, Hanwook Jeong, Young Sub Yoo, Byoungdeog Choi, Daehan Yoo, Seok Sik Kim
Publikováno v:
ECS Transactions. 28:281-286
Vertical diodes for cross-point phase change memory were realized by selective epitaxial growth (SEG) technique using cyclic chemical vapor deposition method. H2/SiH4/Cl2 cyclic CVD system was introduced in batch-type vertical furnace equipement, rep
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::85797a4014689c06e6595198abd2049f
https://doi.org/10.1149/1.3375613
https://doi.org/10.1149/1.3375613
Autor:
Chang Hun Lee, Ju Hee Noh, Hyeon Deok Lee, Young Sub You, Seok Jae Kim, Kong Soo Lee, Yong Woo Hyung, Gil Hwan Son, Daehan Yoo, Jae Jong Han, Yong Kwon Kim
Publikováno v:
Japanese Journal of Applied Physics. 45:L1193-L1196
Germanium (Ge) ion implantation was investigated for crystallinity enhancement during solid phase epitaxial (SPE) regrowth. Electron back-scatter diffraction (EBSD) measurement showed numerical increase of 19% of (100) signal, which might be due to t
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2547d8a425a81e40f7be241827c62f43
https://doi.org/10.1143/jjap.45.l1193
https://doi.org/10.1143/jjap.45.l1193
Autor:
Hanwook Jeong, Jae-jong Han, Byoungdeog Choi, Han-jin Lim, Hyunho Park, Hongsik Jeong, Kong-Soo Lee, Seok-Woo Nam, Chilhee Chung
Publikováno v:
IEEE Electron Device Letters. 33:242-244
In this letter, a cost-effective vertical diode scheme for next-generation memory devices, including phase-change memories (PCMs), is realized. After the contact formation for diodes with only one mask layer, an amorphous silicon (a-Si) film was depo
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3c95c0a75476438cf935f58796f5407d
https://doi.org/10.1109/led.2011.2175358
https://doi.org/10.1109/led.2011.2175358
Autor:
Seok-Woo Nam, Bong-Hyun Kim, Jae-jong Han, Gitae Jeong, Chilhee Chung, Ho-kyun An, Kong-Soo Lee, Ho-Kyu Kang, Yoongoo Kang, Seong-Hoon Jeong, Han-jin Lim, Byoungdeog Choi, Won-Seok Yoo
Publikováno v:
ESSDERC
In this paper, current-voltage-temperature (I-V-T) characteristics of vertical diodes realized by different selective epitaxial growth techniques have been investigated. Diodes by the batch-type cyclic SEG process at low temperature have shown eligib
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::acd8a2766a1cefec31143edc7520aab4
https://doi.org/10.1109/essderc.2012.6343355
https://doi.org/10.1109/essderc.2012.6343355
Autor:
Chan Park, Rae-Hyun Jang, Myeong-Sook Im, Jae-Jong Han, Mihye Kim, Kwan-Hee Yoo, Ji-Seong Jeong
Publikováno v:
Communications in Computer and Information Science ISBN: 9783642242663
This paper proposes a three-dimensional (3D) virtual studio system that supports various types of experiential learning using chroma keying and real-time 3D virtual reality techniques. The objective of the proposed system is to maximize learning, esp
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::316a19d67fdd265b49855f41029ba0ab
https://doi.org/10.1007/978-3-642-24267-0_11
https://doi.org/10.1007/978-3-642-24267-0_11
Autor:
Jae-Jong Han, Yong-woo Hyung, Ho-Min Son, Won-Jun Chang, Hyeong-Ki Kim, Junghyun Park, Hyeon-deok Lee, Woong Lee, Wook-Hyun Kwon, Jung-Geun Jee
Publikováno v:
2007 IEEE International Reliability Physics Symposium Proceedings. 45th Annual.
The reliability properties of NOR flash memory with 65nm node being developed in Samsung electronics are greatly improved by using the newly proposed re-oxidized tunnel oxide. Especially, by optimizing the process variables such as the re-oxidation t
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b11922c68b966c2cf659d167607fb3da
https://doi.org/10.1109/relphy.2007.369890
https://doi.org/10.1109/relphy.2007.369890
Autor:
Kwang Ryul Kim, Daehan Yoo, Byoungdeog Choi, Hanwook Jeong, Chang Jin Kang, Seok Sik Kim, Hyunho Park, Hongsik Jeong, Joo Tae Moon, Jae Jong Han, Kong Soo Lee, Yong Woo Hyung
Publikováno v:
Japanese Journal of Applied Physics. 49:08JF03
Selectivity control in silicon selective epitaxial growth (SEG) for deep contact patterns, which is one of the key processes for silicon-based stacked devices and cell switches for next generation memories, was studied. Absolute values of selectivity
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4197ed0a5234d4f57a93d3ee7aeaeebc
https://doi.org/10.1143/jjap.49.08jf03
https://doi.org/10.1143/jjap.49.08jf03
Autor:
Kong-Soo Lee, Dae-Han Yoo, Young-Sub Yoo, Jae-Jong Han, Seok-Sik Kim, Hong-Sik Jeong, Chang-Jin Kang, Joo-Tae Moon, Hyunho Park, Hanwook Jeong, Gwang-Ryeol Kim, Byoungdeog Choi
Publikováno v:
ECS Meeting Abstracts. :955-955
not Available.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c10afc9133b14953ccaf91ccc7270be1
https://doi.org/10.1149/ma2010-01/17/955
https://doi.org/10.1149/ma2010-01/17/955
Autor:
Jung-Geun Jee, WookHyun Kwon, Woong Lee, Jung-Hyun Park, Hyeong-Ki Kim, Ho-Min Son, Won-Jun Chang, Jae-Jong Han, Yong-Woo Hyung, Hyeon-Deok Lee
Publikováno v:
2007 IEEE International Reliability Physics Symposium Proceedings 45th Annual; 2007, p184-189, 6p