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Plasma Polymerization Enabled Polymer/Metal–Oxide Hybrid Semiconductors for Wearable Electronics

Autor: Seonghwan Hong, Jae Won Na, Hee Jun Kim, Hyun Jae Kim

Publikováno v: ACS Applied Materials & Interfaces. 10:37207-37215

A facile fabrication of polymer/metal-oxide hybrid semiconductors is introduced to overcome the intrinsically brittle nature of inorganic metal-oxide semiconductors. The fabrication of the hybrid semiconductors was enabled by plasma polymerization of

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::64d80e0a08001c91c93e168206a83004
https://doi.org/10.1021/acsami.8b11094

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Improvement in Electrical Characteristics of Eco-friendly Indium Zinc Oxide Thin-Film Transistors by Photocatalytic Reaction

Autor: Jae Won Na, Jin Hyeok Lee, Jun Ki Kang, Sung Pyo Park, Hyun Jae Kim, Dongwoo Kim

Publikováno v: ACS Applied Materials & Interfaces. 10:18837-18844

Eco-friendly solution-processed oxide thin-film transistors (TFTs) were fabricated through photocatalytic reaction of titanium dioxide (PRT). The titanium dioxide (TiO2) surface reacts with H2O under ultraviolet (UV) light irradiation and generates h

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::fec62a4e869c1a5bb60c49b74e42f235
https://doi.org/10.1021/acsami.8b01268

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P-23: Fabrication of Eco-Friendly Solution-Processed Indium Zinc Oxide Thin-Film Transistors through Recycling Based on Photocatalytic Reactions of TiO2

Autor: Hyun Jae Kim, Jin Hyeok Lee, Jae Won Na, Jong Sun Choi, Jun Ki Kang, Sung Pyo Park, Dongwoo Kim

Publikováno v: SID Symposium Digest of Technical Papers. 49:1264-1267

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::cd9a0296a8b4f0c84c7a80e505e665c7
https://doi.org/10.1002/sdtp.12142

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Label-Free Flexible DNA Biosensing System Using Low-Temperature Solution-Processed In-Zn-O Thin-Film Transistors

Autor: Si Joon Kim, Joohye Jung, Jae Won Na, Mardhiah Muhamad Sabri, Hyun Jae Kim, Doo Hyun Yoon, Tae Soo Jung

Publikováno v: IEEE Transactions on Electron Devices. 64:515-520

We investigated a novel deoxyribonucleic acid (DNA) sensing system based on low-temperature solution-processed In–Zn–O (IZO) thin-film transistors (TFTs) suggesting an alternative evolutionary line to the traditional DNA biosensors. The IZO TFTs

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::58f8811da4c4723d0763c13c00a6afd8
https://doi.org/10.1109/ted.2016.2635155

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Preemptive Duloxetine Relieves Postoperative Pain and Lowers Wound Temperature in Centrally Sensitized Patients Undergoing Total Knee Arthroplasty: A Randomized, Double-Blind, Placebo-Controlled Trial

Autor: In Jun Koh, Dong Chul Park, Yong Gyu Sung, Jae Won Na, Man Soo Kim, Yong In

Publikováno v: Journal of Clinical Medicine
Journal of Clinical Medicine, Vol 10, Iss 2809, p 2809 (2021)
Volume 10
Issue 13

(1) Background: The purpose of this study was to determine whether preemptive duloxetine in patients with central sensitization (CS) is effective for acute postoperative pain control and wound healing following total knee arthroplasty (TKA). (2) Meth

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::849c253fe07506284c6bb79a95a921ca
https://doi.org/10.3390/jcm10132809

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Effect of Static and Rotating Magnetic Fields on Low-Temperature Fabrication of InGaZnO Thin-Film Transistors

Autor: Jeong Woo Park, Jae Won Na, Won Gi Kim, Heesoo Lee, Young Jun Tak, Hyun Jae Kim

Publikováno v: ACS applied materialsinterfaces. 10(19)

We suggest thermal treatment with static magnetic fields (SMFs) or rotating magnetic fields (RMFs) as a new technique for the activation of indium–gallium–zinc oxide thin-film transistors (IGZO TFTs). Magnetic interactions between metal atoms in

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::b29ffbf8be52a61addb54f868326d268
https://pubmed.ncbi.nlm.nih.gov/29682960

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Replacement and Rearrangement of an Oxide Lattice by Germanium Doping in Solution-Processed Indium–Zinc-Oxide Thin-Film Transistors

Autor: Mardhiah Muhamad Sabri, Si Joon Kim, Chul Ho Kim, Hyun Jae Kim, Joohye Jung, Jae Won Na, Tae Soo Jung

Publikováno v: IEEE Transactions on Electron Devices. 62:2888-2893

Germanium (Ge) doping effects on solution-processed indium–zinc-oxide (IZO) thin-film transistors (TFTs) were investigated. Ge doping increased the carrier concentration of Ge-doped IZO (Ge:IZO) thin films from $3.32 \times 10^{14}$ to $3.13 \times

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::a26b87baeef7690ee0778e3a0dc21ff2
https://doi.org/10.1109/ted.2015.2455558

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