Zobrazeno 1 - 10
of 57
pro vyhledávání: '"Jae-Seung Roh"'
Autor:
Yoohan Ma, Geon Woo Sim, Sungjin Jo, Dong Choon Hyun, Jae-Seung Roh, Dongwook Ko, Jongbok Kim
Publikováno v:
Applied Sciences, Vol 14, Iss 1, p 420 (2024)
Flexible transparent electrodes are integral to the advancement of flexible optoelectronic devices such as flexible displays and solar cells. However, indium tin oxide (ITO), a traditional material used in transparent electrodes, exhibits a significa
Externí odkaz:
https://doaj.org/article/a88da32b1fec4bb7aa52f33047c19831
Autor:
Sang-Hye Lee, Jae-Seung Roh
Publikováno v:
Crystals, Vol 14, Iss 2, p 122 (2024)
In this study, changes in the microstructure of coal-tar pitch (CTP) during successive processes, including pyrolysis, polycondensation, and crystallization, were examined in connection with the resulting variations in structure factors, as measured
Externí odkaz:
https://doaj.org/article/be385e48cf984fd5b833d417d2838380
Publikováno v:
Materials, Vol 17, Iss 2, p 387 (2024)
In this study, carbon blocks were fabricated using isotropic coke and coal tar pitch as raw materials, with a variation in pressure during cold isostatic pressing (CIP). The CIP pressure was set to 50, 100, 150, and 200 MPa, and the effect of the CIP
Externí odkaz:
https://doaj.org/article/fbc68f249fd148bf9927ffbeddbac7b9
Publikováno v:
Applied Sciences, Vol 14, Iss 2, p 772 (2024)
In this study, isotropic coke and coal tar pitch were subjected to compression molding while varying the compression pressure and holding time. As a result, carbon blocks were fabricated, and their mechanical properties and microstructure were analyz
Externí odkaz:
https://doaj.org/article/cef28fc344444f42ad6c9d2e5d30d4d0
Publikováno v:
Materials, Vol 16, Iss 23, p 7254 (2023)
The quantification of the phase fraction is critical in materials science, bridging the gap between material composition, processing techniques, microstructure, and resultant properties. Traditional methods involving manual annotation are precise but
Externí odkaz:
https://doaj.org/article/fc4dc879dbd146ee954662cb03b0bb9b
Publikováno v:
Materials, Vol 16, Iss 9, p 3543 (2023)
The purpose of this study is to improve the oxidation resistance of graphite blocks after graphitization at 2800 °C by introducing a curing process of phenolic resin, used as a binder to control the pore size. Using the methylene index obtained from
Externí odkaz:
https://doaj.org/article/46add4f28f0f4e6cb0843cc6d9410cd6
Publikováno v:
Materials, Vol 15, Iss 9, p 3259 (2022)
In the present study, graphite blocks were fabricated using synthetic graphite scrap and phenolic resin, and the effect of the heating rate during carbonization on their mechanical and electrical characteristics was examined. While varying the heatin
Externí odkaz:
https://doaj.org/article/78117e1aa658401a8f95793f670bb1ef
Autor:
Ki-Sik Im, Siva Pratap Reddy Mallem, Jin-Seok Choi, Young-Min Hwang, Jae-Seung Roh, Sung-Jin An, Jae-Hoon Lee
Publikováno v:
Nanomaterials, Vol 12, Iss 4, p 643 (2022)
We fabricated and characterized AlGaN/GaN high-electron mobility transistors (HEMTs) with a nano-sized in situ cap layer (one is a silicon carbon nitride (SiCN) layer, and the other is a silicon nitride (SiN) layer) comparing to the conventional devi
Externí odkaz:
https://doaj.org/article/bf5a99d37a354c29b64625679410418f
Publikováno v:
Materials, Vol 14, Iss 16, p 4711 (2021)
Milled polyacrylonitrile (PAN)-based Carbon Fibers (mPCFs) were prepared from PAN-based carbon fibers by using a ball milling process. The resulting structural changes in the mPCFs were analyzed by correlating the analytical results obtained by X-ray
Externí odkaz:
https://doaj.org/article/272073ca94d648a98f406d8670201754
Autor:
Yeo-Jin Choi, Jae-Hoon Lee, Jin-Seok Choi, Sung-Jin An, Young-Min Hwang, Jae-Seung Roh, Ki-Sik Im
Publikováno v:
Crystals, Vol 11, Iss 5, p 489 (2021)
We investigated the effects of in situ silicon carbon nitride (SiCN) cap layer of AlGaN/GaN high-electron mobility transistors (HEMTs) on DC, capacitance-voltage (C-V) and low-frequency noise (LFN). The proposed device with SiCN cap layer exhibited e
Externí odkaz:
https://doaj.org/article/a9c4064952f245aeb463728591060c45