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Publikováno v:
Solid State Phenomena. 92:239-242
Publikováno v:
Process, Equipment, and Materials Control in Integrated Circuit Manufacturing IV.
The bitline contact hole and the storage node contact hole of 0.22 micrometers in 1G DRAM device manufacturing of 0.18 micrometers design rule were formed with thin nitride barrier self- aligned contact (TNBSAC) technology. In this work the isotropic