Zobrazeno 1 - 5
of 5
pro vyhledávání: '"Jae-Hwan Yi"'
Publikováno v:
Microelectronic Engineering. 198:98-102
With continued advances in semiconductor devices below 10 nm, the required specification for ultraclean wafer surfaces (i.e., achieving metal contamination 95% in all conditions because it reacted with both the chelating agents and HF.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::589820e11987fb79411e25424b2d7bfc
https://doi.org/10.1016/j.mee.2018.06.012
https://doi.org/10.1016/j.mee.2018.06.012
Autor:
Jin-Goo Park, Hyun-Tae Kim, Hee-Jin Song, Dong-Hwan Lee, Sung-Hae Jang, Jae-Hwan Yi, Eun-Suck Choi
Publikováno v:
ECS Transactions. 80:249-256
With continued advances in logic devices below 10 nm design rule, the required specification for ultraclean wafer surface becomes very challenging to achieve zero defects in particles below 20 nm and lower than 0.5X1010 atoms/cm2 metal ions on the fi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::51e4e76d5f7c667364184418907ab559
https://doi.org/10.1149/08002.0249ecst
https://doi.org/10.1149/08002.0249ecst
Publikováno v:
ECS Transactions. 11:79-84
To manufacture the wafer used for device chip, several polishing and cleaning process are required. In this study, new concept cleaning process was developed with ozonated DI water (DIO3) to achieve low COO (cost of ownership). Ozone concentration of
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::fbbf89f6d639890bbd0940c5953a01ad
https://doi.org/10.1149/1.2779365
https://doi.org/10.1149/1.2779365
Publikováno v:
Korean Journal of Materials Research. 18:307~312-307~312
As increasing the sizeof wafers for the mass production of device, theimproved uniformity and near zero defects of Si wafersare required for the semiconductor manufacturing. Ingeneral, vacuum chuck or membrane type films are usedto attach the wafers
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::901c99394f7a287e28bc5acf09463dc3
https://doi.org/10.3740/mrsk.2008.18.6.307
https://doi.org/10.3740/mrsk.2008.18.6.307
Publikováno v:
ECS Meeting Abstracts. :1018-1018
not Available.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::96a45f1e7494654c92a6fcded2ea7e03
https://doi.org/10.1149/ma2007-02/18/1018
https://doi.org/10.1149/ma2007-02/18/1018