Zobrazeno 1 - 10
of 14
pro vyhledávání: '"Jae-Hoon Ha"'
Publikováno v:
Water Environment Research. 93:491-501
The technical papers published in 2019 regarding wastewater treatment and microbial films were classified into two categories: biofilm and biofilm reactors. The biofilm category includes biofilm formation, biofilm consortia, bacterial signals, biofou
Publikováno v:
Advanced Electronic Materials, Vol 9, Iss 11, Pp n/a-n/a (2023)
Abstract Photodetectors sensing the short‐wave infrared (SWIR) region have great potential due to their significant advantages in a variety of applications because SWIR light possesses both characteristics of visible light and infrared light. Among
Externí odkaz:
https://doaj.org/article/3675b2a0f98447ef949b173c8e082090
Publikováno v:
Journal of the Korea institute for structural maintenance and inspection. 19:170-178
Publikováno v:
Journal of the Korea Concrete Institute. 25:477-484
In this study, eleven reinforced concrete beams, ground granulated blast furnace slag, replacing recycled coarse aggregate (BRS series) and recycled coarse aggregate with steel fiber (BSRS series), and standard specimen (BSS) were constructed and tes
Autor:
Sang-Hyeon Kim, Ilpyo Roh, Jae-Hoon Han, Dae-Myeong Geum, Seong Kwang Kim, Soo Seok Kang, Hang-Kyu Kang, Woo Chul Lee, Seong Keun Kim, Do Kyung Hwang, Yun Heub Song, Jin Dong Song
Publikováno v:
IEEE Journal of the Electron Devices Society, Vol 9, Pp 42-48 (2021)
In this study, we demonstrated low leakage current and high mobility thin body (In)GaSb p-FETs. Through the optimization of the V/III ratio during the epitaxial growth, we achieved a highly insulating bottom Al0.95Ga0.05Sb barrier, which eliminates t
Externí odkaz:
https://doaj.org/article/e14f70b92ca14adebb389839bfcd79c5
Autor:
Sanghyeon Kim, Seong Kwang Kim, Sanghoon Shin, Jae-Hoon Han, Dae-Myeong Geum, Jae-Phil Shim, Subin Lee, Hansung Kim, Gunwu Ju, Jin Dong Song, M. A. Alam, Hyung-Jun Kim
Publikováno v:
IEEE Journal of the Electron Devices Society, Vol 7, Pp 869-877 (2019)
Self-heating has emerged as an important performance/reliability challenge for modern MOSFETs. The challenge is further acerbated for III-V transistors, especially when integrated monolithically in a 3-D platform for applications in ultrafast logic,
Externí odkaz:
https://doaj.org/article/aa195c405ee44ac7bebf3d075afbcf48
Autor:
Namgi Hong, Dae-Myeong Geum, Tae Soo Kim, Seung-yeop Ahn, Jae-Hoon Han, Daehwan Jung, Geunhwan Ryu, SangHyeon Kim, Ki Jun Yu, Won Jun Choi
Publikováno v:
Advanced Photonics Research, Vol 2, Iss 2, Pp n/a-n/a (2021)
Herein, an approach to form high‐quality GaAs‐based flexible photodetectors (PDs) is first demonstrated by metal wafer bonding (MWB) and high‐throughput epitaxial lift‐off (ELO) with encapsulated thermally grown silicon dioxide (t‐SiO2) for
Externí odkaz:
https://doaj.org/article/2e13f0dc0c614167926ee9508c1f0b91
Growth and Fabrication of GaAs Thin-Film Solar Cells on a Si Substrate via Hetero Epitaxial Lift-Off
Autor:
Seungwan Woo, Geunhwan Ryu, Taesoo Kim, Namgi Hong, Jae-Hoon Han, Rafael Jumar Chu, Jinho Bae, Jihyun Kim, In-Hwan Lee, Deahwan Jung, Won Jun Choi
Publikováno v:
Applied Sciences, Vol 12, Iss 2, p 820 (2022)
We demonstrate, for the first time, GaAs thin film solar cells epitaxially grown on a Si substrate using a metal wafer bonding and epitaxial lift-off process. A relatively thin 2.1 μm GaAs buffer layer was first grown on Si as a virtual substrate, a
Externí odkaz:
https://doaj.org/article/2d3b778270174669ba04eaef20f7c3bd
Publikováno v:
BMC Health Services Research, Vol 18, Iss 1, Pp 1-8 (2018)
Abstract Background South Korean government is currently in progress of expanding the coverage of telemedicine projects as part of an attempt to vitalize service industry, but is facing fierce opposition from KMA. Practice of telemedicine requires su
Externí odkaz:
https://doaj.org/article/70d3a9f735d34b069e89beec4e9c526d
Publikováno v:
IEEE Journal of the Electron Devices Society, Vol 6, Pp 910-921 (2018)
In this paper, approaches to obtain the sub-kT/q non-hysteretic operation mode in negative capacitance (NC) field-effect-transistors for a wide band of applied gate voltages, using capacitance matching, were systematically investigated using TCAD sim
Externí odkaz:
https://doaj.org/article/b59a1150fbe1447baa41a122196fcc69