Zobrazeno 1 - 10
of 14
pro vyhledávání: '"Jae-Ho Hong"'
Autor:
Jae-Ho Hong, Eui-Young Jeong, Jeong-Soo Lee, Jun-Sik Yoon, Yoon-Ha Jeong, Ye-Ram Kim, Rock-Hyun Baek, Chang-Ki Baek
Publikováno v:
IEEE Transactions on Electron Devices. 62:3441-3444
In this brief, we systematically investigated the effects of fin pitch (FP) and fin height ( $H_{\textrm {fin}}$ ) on parasitic resistances and capacitances to achieve the best $RC$ delay, which is an adequate metric of the ac behavior of FinFETs, fo
Autor:
Rock-Hyun Baek, Chang-Ki Baek, Yoon-Ha Jeong, Jeong-Soo Lee, Ye-Ram Kim, Jae-Ho Hong, Jun-Sik Yoon, Eui-Young Jeong
Publikováno v:
IEEE Electron Device Letters. 36:994-996
DC/AC characteristics of Si bulk FinFETs including middle-of-line levels are precisely investigated using well-calibrated 3-D device simulations for system-on-chip applications. Scaling the fin widths down to 5 nm effectively enhances gate-to-channel
Autor:
jae ho Hong, Baek Seung Yub
Publikováno v:
Journal of the Korean Society of Mechanical Technology. 12:11-18
Publikováno v:
Journal of the Physical Society of Japan. 71:2186-2191
As the temperature of liquid under negative pressure approaches the absolute zero, nucleation due to thermal fluctuations rarely occurs. Instead of thermal motion, quantum fluctuations may induce t...
Publikováno v:
KSME International Journal. 12:493-503
An experimental study was carried out on convective boiling heat transfer for mixtures of R11 and R113 flowing in a uniformly heated vertical tube by measuring the wall and bulk temperatures, and the results were compared with an existing correlation
Autor:
Rock-Hyun Baek, Jae-Ho Hong, Myung-Dong Ko, Kihyun Kim, Jeong-Soo Lee, Chan-Hoon Park, Jun-Sik Yoon, Yoon-Ha Jeong
Publikováno v:
71st Device Research Conference.
In the devices with nanowire channel, series resistance is an important parameter. As the channel length is scaled down, channel resistance is gradually small and it has therefore become an important issue to keep the value of series resistance small
Autor:
Jae-Ho Hong, Yoon-Ha Jeong, Ye-Ram Kim, Sanghyun Lee, Eui-Young Jeong, Rock-Hyun Baek, Jun-Sik Yoon, Jeong-Soo Lee
Publikováno v:
Japanese Journal of Applied Physics. 54:04DN05
In this paper, we propose an optimized design for Si-nanowire FETs in terms of spacer dielectric constant (κsp), extension length (LEXT), nanowire diameter (Dnw), and operation voltage (VDD) for the sub-10 nm technology node. Using well-calibrated T
Autor:
Ye-Ram Kim, Jae-Ho Hong, Jun-Sik Yoon, Eui-Young Jeong, Jeong-Soo Lee, Yoon-Ha Jeong, Sanghyun Lee
Publikováno v:
Japanese Journal of Applied Physics. 54:04DC06
Source/drain series resistances (Rsd) of n- and p-type double-gate fin field-effect transistors (FinFETs) were successfully extracted using the methods applicable to short channel devices. Rsd is decomposed into spreading, sheet, and contact resistan
Publikováno v:
ASME 2nd International Conference on Microchannels and Minichannels.
Proteinaceous bubbles of 185 nm in average diameter were synthesized by a sonochemical treatment of bovine serum albumin in aqueous solution and the nanoparticles (TiO2 ) solution was made by ultrasonic irradiation. To study the macroscopic flow beha
Publikováno v:
Proceeding of International Heat Transfer Conference 12.