Zobrazeno 1 - 10
of 78
pro vyhledávání: '"Jae Seong Park"'
Publikováno v:
Applied Sciences, Vol 9, Iss 7, p 1296 (2019)
We propose a new method of fabricating metal–polymer composite targets for sputtering, which makes it easier to control the composition and enables the homogeneous and reproducible fabrication of metal–polymer nanocomposites over large areas. Usi
Externí odkaz:
https://doaj.org/article/337bb94dc6bd4e9e85d0d8e18f6b3993
Autor:
Huiwen Deng, Jae‐Seong Park, Xuezhe Yu, Zizhuo Liu, Hui Jia, Haotian Zeng, Junjie Yang, Shujie Pan, Siming Chen, Alwyn Seeds, Mingchu Tang, Peter Smowton, Huiyun Liu
Publikováno v:
Advanced Physics Research, Vol 3, Iss 10, Pp n/a-n/a (2024)
Abstract To further enhance the performance and understand the mechanism of InAs quantum dot (QD) laser under high temperature, both theoretically and experimentally it is investigated, the effects of the technique of the combination of direct n‐ty
Externí odkaz:
https://doaj.org/article/a79260c04b0541beb69d1df8a58f8a4c
Autor:
Beibei Xu, Chaoyuan Jin, Jae‐Seong Park, Huiyun Liu, Xing Lin, Junjie Cui, Daoyuan Chen, Jianrong Qiu
Publikováno v:
InfoMat, Vol 6, Iss 8, Pp n/a-n/a (2024)
Abstract The rapid development of emerging technologies observed in recent years, such as artificial intelligence, machine learning, mobile internet, big data, cloud computing, and the Internet of Everything, are generating escalating demands for exp
Externí odkaz:
https://doaj.org/article/a168e0ec5bf74b55a52ba04b0c3c1b08
Autor:
Victoria Cao, Jae-Seong Park, Mingchu Tang, Taojie Zhou, Alwyn Seeds, Siming Chen, Huiyun Liu
Publikováno v:
Frontiers in Physics, Vol 10 (2022)
With continuously growing global data traffic, silicon (Si)-based photonic integrated circuits have emerged as a promising solution for high-performance Intra-/Inter-chip optical communication. However, a lack of a Si-based light source remains to be
Externí odkaz:
https://doaj.org/article/14402cba466b48679d3fe46ee1be9d39
Autor:
Taojie Zhou, Mingchu Tang, Guohong Xiang, Boyuan Xiang, Suikong Hark, Mickael Martin, Thierry Baron, Shujie Pan, Jae-Seong Park, Zizhuo Liu, Siming Chen, Zhaoyu Zhang, Huiyun Liu
Publikováno v:
Nature Communications, Vol 11, Iss 1, Pp 1-7 (2020)
Fabricating semiconductor photonic lasers based on III-V materials are challenging because of the material mismatch with silicon. Here the authors monolithically grow quantum-dot-based photonic crystal membrane lasers directly on an on-axis silicon s
Externí odkaz:
https://doaj.org/article/b08040acf3c64cc9a8846550f66e9a43
Autor:
Taojie Zhou, Mingchu Tang, Haochuan Li, Zhan Zhang, Yuzhou Cui, Jae-Seong Park, Markel Martin, Thierry Baron, Siming Chen, Huiyun Liu, Zhaoyu Zhang
Publikováno v:
IEEE Journal of Selected Topics in Quantum Electronics
IEEE Journal of Selected Topics in Quantum Electronics, 2022, 28 (3), pp.1-6. ⟨10.1109/JSTQE.2021.3133546⟩
IEEE Journal of Selected Topics in Quantum Electronics, 2022, 28 (3), pp.1-6. ⟨10.1109/JSTQE.2021.3133546⟩
International audience
Autor:
Junjie Yang, Keshuang Li, Hui Jia, Huiwen Deng, Xuezhe Yu, Pamela Jurczak, Jae-Seong Park, Shujie Pan, Wei Li, Siming Chen, Alwyn Seeds, Mingchu Tang, Huiyun Liu
Publikováno v:
Nanoscale. 14(46)
Epitaxial growth of III-V materials on a CMOS-compatible Si (001) substrate enables the feasibility of mass production of low-cost and high-yield Si-based III-V optoelectronic devices. However, the material dissimilarities between III-V and group-IV
Autor:
Xuezhe Yu, Zizhuo Liu, Huiwen Deng, Pamela Jurczak, Huan Wang, Siming Chen, Huiyun Liu, Ana M. Sanchez, Richard Beanland, Manyu Dang, Ying Lu, Jin-Chuan Zhang, Peter Michael Smowton, Junjie Yang, Hui Jia, Alwyn J. Seeds, Mingchu Tang, Keshuang Li, Wei Li, Xiaodong Han, Fengqi Liu, Jae Seong Park
Publikováno v:
Emerging Applications in Silicon Photonics II.
Autor:
Hui Jia, Junjie Yang, Mingchu Tang, Wei Li, Pamela Jurczak, Xuezhe Yu, Taojie Zhou, Jae-Seong Park, Keshuang Li, Huiwen Deng, Xueying Yu, Ang Li, Siming Chen, Alwyn Seeds, Huiyun Liu
Publikováno v:
Journal of Physics D: Applied Physics. 55:494002
In this work, we investigate the epitaxial growth of InAs quantum dots (QDs) on Ge substrates. By varying the growth parameters of growth temperature, deposition thickness and the growth rate of InAs, high density (1.2 × 1011 cm−2) self-assembled
Autor:
Ying Lu, Xiao Hu, Mingchu Tang, Victoria Cao, Jie Yan, Dingyi Wu, Jae-Seong Park, Huiyun Liu, Xi Xiao, Siming Chen
Publikováno v:
Journal of Physics D: Applied Physics. 55:484003
We investigated the optical feedback effects on the static and dynamic characteristics of 1.3 μm quantum-dot (QD) Fabry–Pérot laser under reflection from −40 dB up to −8 dB. The onset of coherence collapse is determined as −14 dB from the o