Zobrazeno 1 - 10
of 83
pro vyhledávání: '"Jae Kyoung Mun"'
Publikováno v:
2022 6th IEEE Electron Devices Technology & Manufacturing Conference (EDTM).
Publikováno v:
ECS Journal of Solid State Science and Technology. 8:Q3079-Q3082
Publikováno v:
Materials Research Bulletin. 83:597-602
The electrical properties of Al 2 O 3 films have been studied as the dielectric materials for electronic devices which require a low leakage current and high breakdown field. In this work, Al 2 O 3 films with various thicknesses (as low as 1030 nm
Publikováno v:
Solid-State Electronics. 114:121-130
The effects of the doping concentration ratios between upper and lower silicon planar-doping layers on the DC and RF characteristics of the double planar doped pseudomorphic high electron mobility transistors (pHEMTs) are investigated. From the devic
Autor:
Jinwoo Cheon, Jouha Min, Dong Min Kang, Ho Kyun Ahn, Jae Kyoung Mun, Cesar M. Castro, Jong-Won Lim, Changwook Min, Hae-Seung Lee, Jongmin Park, Hakho Lee, Ralph Weissleder, Tae Hyun Shin, Yongjun Lim
Publikováno v:
PMC
© 2017 The Royal Society of Chemistry. Magnetic nanoparticles (MNPs) are widely used in biomedical and clinical applications, including medical imaging, therapeutics, and biological sample processing. Rapid characterization of MNPs, notably their ma
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::7d7ca005ec32b35c5512ac0e25215092
https://hdl.handle.net/1721.1/134885
https://hdl.handle.net/1721.1/134885
Publikováno v:
Microwave and Optical Technology Letters. 56:96-99
In this article, we demonstrate a 9.7–12.9-GHz monolithic microwave integrated circuit low-noise amplifier (LNA) designed and fabricated using a AlGaN/GaN 0.25-µm high-electron mobility transistor on silicon carbide (SiC) technology. Microstriplin
Autor:
Jongmin Lee, Hyung-Moo Park, Jae-Kyoung Mun, Seong-Il Kim, Eun-Soo Nam, Dong Min Kang, Jong-Won Lim, Sang-Heung Lee, Hokyun Ahn, Haecheon Kim, Hyung-Sup Yoon, Chull-Won Ju, Byoung-Gue Min
Publikováno v:
Thin Solid Films. 547:106-110
We report the fabrication and DC and microwave characteristics of 0.5 μm AlGaN/GaN high electron mobility transistors using double plasma treatment process. Silicon nitride layers 700 and 150 A thick were deposited by plasma-enhanced chemical vapor
Autor:
Hyun-Seok Kim, Hyun-Chang Park, Young-Jin Kim, Jae-Kyoung Mun, Mansoor Ali Khan, Hyung-Moo Park, Jun-Woo Heo
Publikováno v:
Journal of the Korean Physical Society. 62:787-793
In this research, a stand-alone camel-gate (⌝) head structure has been studied to investigate the effects of the field plate (FP) in the source access region in AlGaN/GaN high-electron-mobility transistors (HEMTs). The camel gate serves as an FP to
Publikováno v:
Microwave and Optical Technology Letters. 54:2103-2106
In this article, a gate recessed AlGaN/GaN high electron mobility transistor (HEMT) was developed using 4-in. compound semiconductor process. We designed and fabricated four types of AlGaN/GaN HEMT to characterize the performance of devices. The effe
Publikováno v:
Japanese Journal of Applied Physics. 45:3358-3363
We report the fabrication and DC and microwave characteristics of 0.12 µm double-recessed T-gate AlGaAs/InGaAs/GaAs pseudomorphic high-electron-mobility transistors (PHEMTs) using dielectric-assisted process. Silicon nitride layers 300 and 200 A thi