Zobrazeno 1 - 10
of 33
pro vyhledávání: '"Jae Joon Chang"'
Autor:
Dong Ho Lee, Ki Seok Yang, Chang-Ho Lee, Haksun Kim, J. Laskar, Jae Joon Chang, Ockgoo Lee, Jeonghu Han, Youn Suk Kim, Wangmyong Woo, Hyungwook Kim, Kyu Hwan An
Publikováno v:
IEEE Journal of Solid-State Circuits. 43:1064-1075
Fully integrated CMOS power amplifiers (PAs) with parallel power-combining transformer are presented. For the high power CMOS PA design, two types of transformers, series-combining and parallel-combining, are fully analyzed and compared in detail to
Publikováno v:
Thin Solid Films. 495:78-81
With the colloidal suspension of superconducting nanoparticles as a precursor, we have successfully fabricated well-oriented high-T c superconducting Bi 2 Sr 2 CaCu 2 O y films by an electrophoretic deposition method. The colloidal suspension of supe
Publikováno v:
Advanced Materials. 17:1742-1745
Autor:
Martin A. Brooke, April S. Brown, J. Laskar, M. Vrazel, Jae Joon Chang, D.S. Wills, Nan Marie Jokerst, Sungyong Jung, Youngjoong Joo
Publikováno v:
IEEE Journal of Selected Topics in Quantum Electronics. 6:1231-1239
The integration and packaging of optoelectronic devices with electronic circuits and systems has growing application in many fields, ranging from long to micro haul links. An exploration of the opportunities, integration technologies, and some recent
Autor:
Jae Joon Chang, Ki Joong Kim, Izuka Lee, Ki Seok Yang, Chang-Ho Lee, Haksun Kim, Joongjin Nam, Kyu Hwan An, Yunseok Kim
Publikováno v:
2009 IEEE Radio Frequency Integrated Circuits Symposium.
The highly efficient CMOS Power Amplifier Module (PAM) is designed for quad-band cellular handsets comprising GSM850, EGSM, DCS, PCS and supports Class 12 General Packet Radio Service (GPRS) multi-slot operation. This module integrates an input match
Autor:
Seong Ju Hwang, Vincent Rouessac, Eue Soon Jang, Louis Cot, Jihye Gwak, Jin-Ho Choy, André Ayral, Jae Joon Chang
Publikováno v:
Chemistry of Materials
Chemistry of Materials, American Chemical Society, 2007, 19 (15), pp.3840-3844. ⟨10.1021/cm070656s⟩
Chemistry of Materials, American Chemical Society, 2007, 19, pp.3840-3844. ⟨10.1021/cm070656s⟩
Chemistry of Materials, American Chemical Society, 2007, 19 (15), pp.3840-3844. ⟨10.1021/cm070656s⟩
Chemistry of Materials, American Chemical Society, 2007, 19, pp.3840-3844. ⟨10.1021/cm070656s⟩
We have developed new asymmetric high-Tc superconducting (Bi1.85Pb0.35)Sr1.9Ca2.1Cu3.1O10+δ membrane with high efficiency for nitrogen separation from air. This membrane with controlled pore structure can be prepared by the electrophoretic depositio
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::bdbc6f7261f268f0e2993cbbd52b8d87
https://hal.umontpellier.fr/hal-01727821
https://hal.umontpellier.fr/hal-01727821
Autor:
Haksun Kim, Wangmyong Woo, Youn Suk Kim, Hyungwook Kim, J. Laskar, Kyu Hwan An, Jae Joon Chang, Ockgoo Lee, Ki Seok Yang, Chang-Ho Lee
Publikováno v:
2007 IEEE Radio Frequency Integrated Circuits (RFIC) Symposium.
In this paper, a novel monolithic voltage-boosting parallel-primary transformer is presented for the fully integrated CMOS power amplifier design. Multiple primary loops are interweaved in parallel to combine the AC currents from multiple power devic
Autor:
J. Laskar, Ki Seok Yang, Chang-Ho Lee, Kyu Hwan An, Youn Suk Kim, Hyungwook Kim, Wangmyong Woo, Jae Joon Chang, Ockgoo Lee
Publikováno v:
2007 IEEE Radio Frequency Integrated Circuits (RFIC) Symposium.
This paper newly presents a push-pull parallel-combined CMOS power amplifier (PA) and its analysis of operation. The proposed class-E CMOS PA incorporates the push-pull parallel-combined power devices with the 1:1:2 (two single-turn primary windings
Autor:
Kiseok Yang, Jae Joon Chang, Chang-Ho Lee, Wangmyong Woo, Mi Jeong Park, Ockgoo Lee, Haksun Kim, Kyu Hwan An, Joy Laskar
Publikováno v:
2006 Asia-Pacific Microwave Conference.
This paper presents a new polar transmitter architecture that employs analog predistortion to provide substantially instantaneous correction of amplitude and phase errors in RF PAs. This approach enables to enhance the linear output power capability
Autor:
Byung-Sung Kim, Jae Joon Chang, Kiseok Yang, Chang-Ho Lee, Joy Laskar, Wangmyong Woo, Minsik Ahn
Publikováno v:
2006 Asia-Pacific Microwave Conference.
A novel dual-band CMOS SP4T switch with P1dB of higher than 31 dBm is designed to operate at 0.9 GHz and 1.8 GHz. In the Rx switch path, a carefully designed switched resonator is incorporated in order to block high RF signal power from the power amp