Zobrazeno 1 - 3
of 3
pro vyhledávání: '"Jae Hyeon Jun"'
Publikováno v:
Advanced Electronic Materials, Vol 10, Iss 8, Pp n/a-n/a (2024)
Abstract The unique characteristics of an anti‐ambipolar switch (AAS) device exhibit Λ‐shaped transfer responses (namely delta conductance) and present unique opportunities to overcome the limit of silicon‐based, complementary metal‐oxide‐
Externí odkaz:
https://doaj.org/article/4f4e13c0ea1d47a197012ef3e0d9ef46
Autor:
Seung-Mo Kim, Jae Hyeon Jun, Junho Lee, Muhammad Taqi, Hoseong Shin, Sungwon Lee, Haewon Lee, Won Jong Yoo, Byoung Hun Lee
Publikováno v:
Nanomaterials, Vol 14, Iss 20, p 1667 (2024)
Feedback field-effect transistors (FBFETs) have been studied to obtain near-zero subthreshold swings at 300 K with a high on/off current ratio ~1010. However, their structural complexity, such as an epitaxy process after an etch process for a Si chan
Externí odkaz:
https://doaj.org/article/51055b672f0c491a8fafdf8b17e4452a
Publikováno v:
Journal of Franchise Management. 9:45-55
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2c26ad3b770d40a3774ccbfd76d81d2b
https://doi.org/10.21871/kjfm.2018.09.9.3.45
https://doi.org/10.21871/kjfm.2018.09.9.3.45