Zobrazeno 1 - 10
of 269
pro vyhledávání: '"Jae Eung Oh"'
Publikováno v:
PLoS ONE, Vol 13, Iss 9, p e0204078 (2018)
AIM:To investigate the performance of a newly developed three-dimensional (3D) biomechanical model in various transposition procedures for correction of complete sixth nerve palsy with educational purpose. METHODS:A 3D biomechanical eye model was cre
Externí odkaz:
https://doaj.org/article/4d11152796144e2aa5b3d8a8a165ceff
Autor:
Song-Gang Kim, Na-Hyun Bak, Hak Dong Cho, Reddeppa Maddaka, Dong-Jin Nam, Moon-Deock Kim, Jae-Eung Oh, Kedhareswara Sairam Pasupuleti
Publikováno v:
Journal of Materials Chemistry C. 10:160-170
In view of the fact, the poor stability and inadequate chemical properties of conductive polymers inhibit their use in gas sensor applications. Aside from this, the elegant two-dimensional (2D) polymeric graphitic carbon nitride (g-C3N4) have attract
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f4521fd984f64354c2e57a955ed4255a
https://doi.org/10.1039/d1tc04904f
https://doi.org/10.1039/d1tc04904f
Autor:
Song-Gang Kim, Na-Hyun Bak, Jae-Eung Oh, Maddaka Reddeppa, Kedhareswara Sairam Pasupuleti, Dong-Jin Nam, Moon-Deock Kim, Hyeonseok Woo
Publikováno v:
ACS Applied Materials & Interfaces. 13:30146-30154
Although excellent milestones of III-nitrides in optoelectronic devices have been achieved, the focus on the optimization of their geometrical structure for multiple applications is very rare. To address this issue, we exclusively designed a prototyp
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2efa1d9212b7a14aa5e1681a9282dbd9
https://doi.org/10.1021/acsami.1c04469
https://doi.org/10.1021/acsami.1c04469
Autor:
이옥동(Ok-Dong Lee), 오재응(Jae-Eung Oh)
Publikováno v:
Transactions of the Korean Society for Noise and Vibration Engineering. 29:262-269
Transfer paths are complex and difficult to analyze. The characteristics of vibration and noise transmission are also complex and various vibrations and noise sources are correlated. In this study, we experimentally investigated the noise and vibrati
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::447add206e2324567b60cf0190c85466
https://doi.org/10.5050/ksnve.2019.29.2.262
https://doi.org/10.5050/ksnve.2019.29.2.262
Publikováno v:
Journal of Crystal Growth. 509:141-145
The electrical properties of AlGaN/GaN high electron mobility transistor structures with composite Fe-doped GaN/undoped GaN buffers grown on (1 1 0) Si substrates by ammonia molecular beam epitaxy were reported. Fe concentration in the range of 1017
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4ff458f1af0579d3d15454c4d0b17bd9
https://doi.org/10.1016/j.jcrysgro.2018.07.016
https://doi.org/10.1016/j.jcrysgro.2018.07.016
Autor:
Dojin Kim, Moon-Deock Kim, Jae Eung Oh, Byung-Guon Park, Nguyen Duc Chinh, Tae Geun Kim, Maddaka Reddeppa
Publikováno v:
Dalton Transactions. 48:1367-1375
In gas sensors, metal oxide semiconductors have been considered as favorable resistive-type toxic gas sensing materials. However, the higher temperature operation of metal oxides becomes a barrier for their wide range of applications in explosive and
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::f4386709744e3ebfd9c3ab28589a4b40
https://doi.org/10.1039/c8dt04709j
https://doi.org/10.1039/c8dt04709j
Autor:
Kedhareswara Sairam Pasupuleti, Sourabh S. Chougule, Namgee Jung, Young-Jun Yu, Jae-Eung Oh, Moon-Deock Kim
Publikováno v:
Applied Surface Science. 594:153474
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5662f5fa209874077c7490d4b96b3c5b
https://doi.org/10.1016/j.apsusc.2022.153474
https://doi.org/10.1016/j.apsusc.2022.153474
Autor:
Maddaka, Reddeppa, Dong-Jin, Nam, Na-Hyun, Bak, Kedhareswara Sairam, Pasupuleti, Hyeonseok, Woo, Song-Gang, Kim, Jae-Eung, Oh, Moon-Deock, Kim
Publikováno v:
ACS applied materialsinterfaces. 13(25)
Although excellent milestones of III-nitrides in optoelectronic devices have been achieved, the focus on the optimization of their geometrical structure for multiple applications is very rare. To address this issue, we exclusively designed a prototyp
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=pmid________::d93d89b98c23415e378b46a8377a37ba
https://pubmed.ncbi.nlm.nih.gov/34143594
https://pubmed.ncbi.nlm.nih.gov/34143594
Autor:
Koteswara Rao Peta, Song-Gang Kim, Kedhareswara Sairam Pasupuleti, Maddaka Reddeppa, Jae-Eung Oh, Moon-Deock Kim, Byung-Guon Park
Publikováno v:
ACS applied materialsinterfaces.
The surface states, poor carrier life, and other native defects in GaN nanorods (NRs) limit their utilization in high-speed and large-gain ultraviolet (UV) photodetection applications. Making a hybrid structure is one of the finest strategies to over
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::b5c714bbf2aae7bffff53128ecbecb78
https://pubmed.ncbi.nlm.nih.gov/33200919
https://pubmed.ncbi.nlm.nih.gov/33200919
Autor:
Moon-Deock Kim, Sutripto Majumder, Young Heon Kim, Jae-Eung Oh, Maddaka Reddeppa, Byung-Guon Park, Song-Gang Kim, Dojin Kim
Publikováno v:
Nanotechnology. 31(47)
Recently, III-nitride semiconductor nanostructures, especially InGaN/GaN quantum well nanorods (NRs), have been established as a promising material of choice for nanoscale optoelectronics and photoelectrochemical (PEC) water-splitting applications. D
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::9bf7f1febb2e3cc08be9303f102ccec8
https://pubmed.ncbi.nlm.nih.gov/32629439
https://pubmed.ncbi.nlm.nih.gov/32629439