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pro vyhledávání: '"Jae E. Lim"'
Autor:
Y. Kim, Bill Bowers, Michael Freiler, Gennadi Bersuker, Renate Bergmann, Jerry Chen, Eric Shero, Loyd Perrymore, Chris M. Sparks, Jae E. Lim, Robert W. Murto, Howard R. Huff, Joel Barnett, Steven Lin, Patrick S. Lysaght, Avinash Agarwal, Billy Nguyen, Deborah J. Riley
Publikováno v:
MRS Proceedings. 670
ZrO2 and HfO2 and their alloys with SiO2 are currently among the leading high-k materials for replacing SiOxNy as the gate dielectric for the sub-100 nm technology nodes. International SEMATECH (ISMT) is currently investigating integration issues ass
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e456b7791b9578370e8ec9bddaacb351
https://doi.org/10.1557/proc-670-k2.1
https://doi.org/10.1557/proc-670-k2.1
