Zobrazeno 1 - 10
of 56
pro vyhledávání: '"Jadwiszczak, Jakub"'
Publikováno v:
Nanoscale, 2023
Memristors are prominent passive circuit elements with promising futures for energy-efficient in-memory processing and revolutionary neuromorphic computation. State-of-the-art memristors based on two-dimensional (2D) materials exhibit enhanced tunabi
Externí odkaz:
http://arxiv.org/abs/2301.05260
Autor:
Maguire, Pierce, Jadwiszczak, Jakub, O'Brien, Maria, Keane, Darragh, Duesberg, Georg S., McEvoy, Niall, Zhang, Hongzhou
We report a simple technique for the selective etching of bilayer and monolayer MoS$_2$. In this work, chosen regions of MoS$_2$ were activated for oxygen adsorption and reaction by the application of low doses of He$^+$ at 30 keV in a gas ion micros
Externí odkaz:
http://arxiv.org/abs/1906.04850
Autor:
Jadwiszczak, Jakub, Li, Gen, Cullen, Conor P., Wang, Jing Jing, Maguire, Pierce, Duesberg, Georg S., Lunney, James G., Zhang, Hongzhou
We report up to ten-fold enhancement of the photoresponsivity of monolayer MoS$_2$ by treatment with O$_2$:Ar (1:3) plasma. We characterize the surface of plasma-exposed MoS$_2$ by TEM, Raman and PL mapping and discuss the role of MoO$_x$ in improvin
Externí odkaz:
http://arxiv.org/abs/1812.09517
Autor:
Maguire, Pierce, Downing, Clive, Jadwiszczak, Jakub, O'Brien, Maria, Keane, Darragh, McManus, John B., Duesberg, Georg S., Nicolosi, Valeria, McEvoy, Niall, Zhang, Hongzhou
We investigate the effects of lattice disorders on the low frequency Raman spectra of bilayer MoS2. The bilayer MoS2 was subjected to defect engineering by irradiation with a 30 keV He+ ion beam and the induced morphology change was characterized by
Externí odkaz:
http://arxiv.org/abs/1812.05543
Autor:
Jadwiszczak, Jakub, Keane, Darragh, Maguire, Pierce, Cullen, Conor P., Zhou, Yangbo, Song, Hua-Ding, Downing, Clive, Fox, Daniel S., McEvoy, Niall, Zhu, Rui, Xu, Jun, Duesberg, Georg S., Liao, Zhi-Min, Boland, John J., Zhang, Hongzhou
Two-dimensional layered semiconductors have recently emerged as attractive building blocks for next-generation low-power non-volatile memories. However, challenges remain in the controllable sub-micron fabrication of bipolar resistively switching cir
Externí odkaz:
http://arxiv.org/abs/1811.09545
Autor:
Maguire, Pierce, Fox, Daniel S., Zhou, Yangbo, Wang, Qianjin, O'Brien, Maria, Jadwiszczak, Jakub, Cullen, Conor P., McManus, John, McEvoy, Niall, Duesberg, Georg S., Zhang, Hongzhou
Publikováno v:
Phys. Rev. B 98, 134109 (2018)
Precise and scalable defect engineering of 2D nanomaterials is acutely sought-after in contemporary materials science. Here we present defect engineering in monolayer graphene and molybdenum disulfide (MoS$_2$) by irradiation with noble gas ions at 3
Externí odkaz:
http://arxiv.org/abs/1707.08893
Autor:
Jadwiszczak, Jakub, O'Callaghan, Colin, Zhou, Yangbo, Fox, Daniel S., Weitz, Eamonn, Keane, Darragh, O'Reilly, Ian, Downing, Clive, Shmeliov, Aleksey, Maguire, Pierce, Gough, John J., McGuinness, Cormac, Ferreira, Mauro S., Bradley, A. Louise, Boland, John J., Nicolosi, Valeria, Zhang, Hongzhou
Precise tunability of electronic properties of 2D nanomaterials is a key goal of current research in this field of materials science. Chemical modification of layered transition metal dichalcogenides leads to the creation of heterostructures of low-d
Externí odkaz:
http://arxiv.org/abs/1706.08573
Graphene is a promising candidate to succeed silicon based devices and doping holds the key to graphene electronics. Conventional doping methods through surface functionalization or lattice modification are effective in tuning carrier densities. Thes
Externí odkaz:
http://arxiv.org/abs/1611.04984
Autor:
Elloian, Jeffrey1 (AUTHOR), Jadwiszczak, Jakub1 (AUTHOR), Arslan, Volkan1 (AUTHOR), Sherman, Jeffrey D.1 (AUTHOR), Kessler, David O.2 (AUTHOR), Shepard, Kenneth L.1,3 (AUTHOR) shepard@ee.columbia.edu
Publikováno v:
Scientific Reports. 9/28/2022, Vol. 12 Issue 1, p1-12. 12p.
Publikováno v:
Nanoscale; 4/7/2023, Vol. 15 Issue 13, p6408-6416, 9p