Intrinsic ESD robustness on new high voltage N/PMOS devices in 28 nm FDSOI UTBB CMOS technology through TLP/VFTLP characterizations

Autor: Galy, Ph., Jacquier, B., Haendler, S.

Publikováno v: In Microelectronics Reliability November 2021 126

Inhomogeneous Gain Saturation in EDF: Experiment and Modeling

Autor: Peretti, Romain, Jacquier, B., Boivin, David, Burov, Ekatarina, Jurdyc, Anne-Marie

Publikováno v: Journal of Lightwave Technology / IEEE/OSA Journal of Lightwave Technology; IEEE Journal of Lightwave Technology 29, 10 (2011) 1445 - 1452

Erbium-Doped Fiber Amplifiers can present holes in spectral gain in Wavelength Division Multiplexing operation. The origin of this inhomogeneous saturation behavior is still a subject of controversy. In this paper we present both an experimental meth

Externí odkaz: http://arxiv.org/abs/1104.5302

Impact of the radiation trapping on lifetime measurement of Er 3+ doped glasses

Autor: Stoita, A., Vautey, T., Jacquier, B., Guy, S.

Publikováno v: In Journal of Luminescence 2010 130(7):1119-1123

Resonant fluorescence line narrowing and gain spectral hole burning in erbium-doped fiber amplifier

Autor: Peretti, R., Jurdyc, A.M., Jacquier, B., Burov, E., Gasca, L.

Publikováno v: In Journal of Luminescence 2008 128(5):1010-1012

Engineering of optical active microcavities based on color centers in LiF by ion implantation

Autor: Saoudi, R., Belarouci, A., Moretti, P., Jacquier, B., Rigneault, H., Cathelinaud, M., Nichelatti, E., Montereali, R.M., Somma, F.

Publikováno v: In Optical Materials 2006 28(10):1166-1170