Zobrazeno 1 - 10
of 14
pro vyhledávání: '"Jacques van der Donck"'
Autor:
Maarten van Es, Selman Tamer, Elin Bloem, Laurent Fillinger, Elfi van Zeijl, Klára Maturová, Jacques van der Donck, Rob Willekers, Adam Chuang, Diederik Maas
Publikováno v:
Micro and Nano Engineering, Vol 19, Iss , Pp 100181- (2023)
Patterning photoresist with extreme control over dose and placement is the first crucial step in semiconductor manufacturing. However, how can the activation of modern complex resist components be accurately measured at sufficient spatial resolution?
Externí odkaz:
https://doaj.org/article/0653850e95f944f287663f12ba7a92af
Autor:
Maarten van Es, Mehmet Tamer, Robbert Bloem, Laurent Fillinger, Elfi van Zeijl, Klára Maturová, Jacques van der Donck, Rob Willekers, Diederik Maas
Patterning photoresist with extreme control over dose and placement is the first crucial step in semiconductor manufacturing. However, how can the activation of modern complex resist components be accurately measured at sufficient spatial resolution?
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c3a700cab3f497d3ad392c57bf97ae51
https://doi.org/10.21203/rs.3.rs-1238936/v2
https://doi.org/10.21203/rs.3.rs-1238936/v2
Publikováno v:
MRS Advances. 1:2225-2236
Cleanliness is a prerequisite for obtaining economically feasible yield levels in the semiconductor industry. For the next generation of lithographic equipment, EUV lithography, the size of yield-loss inducing particles for the masks will be smaller
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9debd4814c7f515ecb3a1f34c3b756c5
https://doi.org/10.1557/adv.2016.299
https://doi.org/10.1557/adv.2016.299
Autor:
Daan van Eijk, Wouter Mulckhuyse, Peter van der Walle, Jacques van der Donck, Sandro Hannemann
Publikováno v:
Metrology, Inspection, and Process Control for Microlithography XXVIII.
The background in simple dark field particle inspection shows a high scatter variance which cannot be distinguished from signals by small particles. According to our models, illumination from different azimuths can reduce the background variance. A m
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a2fa11171e92ba42dca2cafcbf1ae475
https://doi.org/10.1117/12.2048684
https://doi.org/10.1117/12.2048684
Autor:
O. Kievit, Pragati Kumar, Jochem Janssen, Diederik Maas, Jacques van der Donck, Dmitry Ityaksov, Peter van der Walle, R. Versluis
Publikováno v:
27th Conference on Metrology, Inspection, and Process Control for Microlithography, 25-28 February 2013, San Jose, CA, USA, 8681
In dark-field particle inspection, the limiting factor for sensitivity is the amount of background scatter due to substrate roughness. This scatter forms a speckle pattern and shows an intensity distribution with a long tail. To reduce false-positive
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::daf909646b20878bafacf92c9dea0087
http://resolver.tudelft.nl/uuid:9bb28268-fd80-4db6-b965-e2540f5e636e
http://resolver.tudelft.nl/uuid:9bb28268-fd80-4db6-b965-e2540f5e636e
Autor:
Jacques van der Donck, Diederik Maas, Peter van der Walle, Pragati Kumar, Richard Versulis, Dmitry Ityaksov, O. Kievit, Jochem Janssen
Publikováno v:
SPIE Proceedings.
TNO has developed the Rapid Nano scanner to detect nanoparticles on EUVL mask blanks. This scanner was designed to be used in particle qualifications of EUV reticle handling equipment. In this paper we present an end-to-end model of the Rapid Nano de
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::eeeb90ba6a6c9d0d6bac9d9da7c95e26
https://doi.org/10.1117/12.2006408
https://doi.org/10.1117/12.2006408
Autor:
Sander van Reek, Jetske Stortelder, Rob Snel, Sjoerd Oostrom, Alfred Abutan, Bert van der Zwan, Jacques van der Donck, Peter van der Walle
Publikováno v:
Extreme Ultraviolet (EUV) Lithography II, 28 February 2011 through 3 March 2011, San Jose, CA, USA, 7969
Since 2006 EUV Lithographic tools have been available for testing purposes giving a boost to the development of fab infrastructure for EUV masks. The absence of a pellicle makes the EUV reticles extremely vulnerable to particles. Therefore, the fab i
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::4676eb14d576fdefc2617771306192c7
http://resolver.tudelft.nl/uuid:d6769fe6-36d5-4176-92c6-8aafb0e127bb
http://resolver.tudelft.nl/uuid:d6769fe6-36d5-4176-92c6-8aafb0e127bb
Publikováno v:
Proceedings of SPIE; 10/10/2017, Vol. 10446, p1-8, 8p
Autor:
Randerson, James
Publikováno v:
New Scientist. 5/4/2002, Vol. 174 Issue 2341, p22. 1p. 1 Color Photograph.