Zobrazeno 1 - 10
of 31
pro vyhledávání: '"Jacques Graffeuil"'
Autor:
Marie Charpentier, Jacques Graffeuil
Publikováno v:
Administration & Éducation. :87-91
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4216666c7683639bed77a4beeb76585f
https://doi.org/10.3917/admed.150.0087
https://doi.org/10.3917/admed.150.0087
Autor:
Thomas Hackbarth, Olivier Llopis, A. Rennane, G. Cibiel, Jacques Graffeuil, Robert Plana, L. Bary
Publikováno v:
Materials Science in Semiconductor Processing. 8:383-388
This paper presents an investigation of the low-frequency noise properties of SiGe-based on n-MODFETs through the characterization of both the gate current noise and the drain current noise, including their correlation. Measurements vs. bias and gate
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8958671994220567bc7c36ca19b9375c
https://doi.org/10.1016/j.mssp.2004.09.107
https://doi.org/10.1016/j.mssp.2004.09.107
Autor:
Katia Grenier, Robert Plana, Jacques Graffeuil, J.P Busquere, E. Tournier, I. Telliez, David Dubuc, J Sadowy
Publikováno v:
Applied Surface Science. 224:419-424
This paper presents broad band low noise amplifier for WLAN applications featuring both low noise, high linearity and low dc power consumption. Low noise figure lower than 2 dB has been obtained with IIP3 of −9 dBm and power gain larger than 20 dB
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::849540d695514fc10117509290f20a80
https://doi.org/10.1016/j.apsusc.2003.08.104
https://doi.org/10.1016/j.apsusc.2003.08.104
Autor:
Jacques Graffeuil, L. Escotte, Olivier Llopis, Robert Plana, L. Bary, Mattia Borgarino, M. Regis, U. Koenig
Publikováno v:
Solid-State Electronics. 45:1891-1897
This paper presents an overview of SiGe technologies and their corresponding noise properties both in the high frequency and low frequency range. We demonstrate that SiGe bipolar technology exhibits impressive low frequency noise performance with an
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::945342c3dfef1da05db0b4f9fd3c55fc
https://doi.org/10.1016/s0038-1101(01)00229-5
https://doi.org/10.1016/s0038-1101(01)00229-5
Publikováno v:
Scopus-Elsevier
This work deals with the short and long term effects of a current stress performed at room temperature on Carbon doped GaInP/GaAs heterojunction bipolar transistors. The investigation has been carried out by means of DC characterizations and low freq
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::a874afb964eede4797ec62eda6e69033
https://doi.org/10.1016/s0026-2714(99)00191-2
https://doi.org/10.1016/s0026-2714(99)00191-2
Publikováno v:
2009 European Microwave Conference (EuMC).
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::119b302a8fa1cdacf6dfde9bd12e8347
https://doi.org/10.23919/eumc.2009.5296126
https://doi.org/10.23919/eumc.2009.5296126
Publikováno v:
33rd European Microwave Conference, 2003.
In this paper, we report a novel technological issue for the realization of low loss coplanar passive circuits on low resistivity (LR-20 /spl Omega/.cm) silicon substrates using simultaneously a silicon surface micromachining in the slots and a thick
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::ed7a7031f3420aeb3bbbc1a3826bd8d7
https://doi.org/10.1109/euma.2003.340823
https://doi.org/10.1109/euma.2003.340823
Autor:
E. Tournier, C. Boulanger, David Dubuc, A. Coustou, Olivier Llopis, Robert Plana, M. Sic, Jacques Graffeuil
Publikováno v:
33rd European Microwave Conference, 2003.
In this paper, we present a 10/30 GHz MMIC Tripler, an X band VCO and a frequency divider using a 0.35 /spl mu/m, 60 GHz-fMAX BiCMOS SiGe technology. The Tripler exhibits a conversion gain in the -5 dB range, and a low additive phase noise of -143 dB
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5244446ca525ea8985561d5801acc79b
https://doi.org/10.1109/euma.2003.340973
https://doi.org/10.1109/euma.2003.340973
Autor:
Jacques Graffeuil, Katia Grenier, Robert Plana, Patrick Pons, Olivier Vendier, Laurent Rabbia, David Dubuc
Publikováno v:
33rd European Microwave Conference, 2003.
This paper presents the design, fabrication and characterization of a MEMS-Based Single Pole Double Throw (SPDT) circuit for millimeterwave applications. High performances are achieved thanks to an original circuit design based on MEMS synthesized qu
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::144f79a9db36de173a1aee5a4e19e06c
https://doi.org/10.1109/euma.2003.341127
https://doi.org/10.1109/euma.2003.341127
Autor:
E. Tournier, Olivier Llopis, M. Regis, Mattia Borgarino, Robert Plana, A. Coustou, J. Sadowy, Laurent Bary, Jacques Graffeuil
Publikováno v:
Scopus-Elsevier
This paper presents an overview on the SiGe technology that could be used to design future communications systems. Both bipolar and unipolar technologies are available. Nevertheless bipolar technology is very successful in term of noise, linearity po
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::7865c98cd3572e787405da6ad8cf2911
https://doi.org/10.1109/apmc.2000.925942
https://doi.org/10.1109/apmc.2000.925942