Zobrazeno 1 - 10
of 19
pro vyhledávání: '"Jacques Boulmer"'
Publikováno v:
Applied Surface Science. 258:9228-9232
We have probed the dopant activity of silicon B-doped by Gas Immersion Laser Doping (GILD). Here, we report on the comparison of optical, electrical and structural properties of Si:B, over a wide concentration range, up to 1.5 × 10 21 cm −3 by ste
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ca512cdc736dd998882981b803e9bfbc
https://doi.org/10.1016/j.apsusc.2011.10.077
https://doi.org/10.1016/j.apsusc.2011.10.077
Publikováno v:
Thin Solid Films. 518:2542-2545
Pulsed laser induced epitaxy (PLIE), based on melting/solidification processes induced by nanosecond laser pulses, is used to synthesize pseudomorphic Si1 − xGex epilayers from 20 to 80 nm thick Ge layers evaporated on a Si(100) wafer. Ge concentra
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d4cb2d9e517aedeb60ce8977c107a2c8
https://doi.org/10.1016/j.tsf.2009.09.154
https://doi.org/10.1016/j.tsf.2009.09.154
Autor:
Davide Cammilleri, Daniel Bouchier, C. Tran Manh, Dominique Débarre, N. Yam, Frédéric Fossard, Mathieu Halbwax, Jacques Boulmer
Publikováno v:
Thin Solid Films
Thin Solid Films, Elsevier, 2008, 517, pp.327-330. ⟨10.1016/j.tsf.2008.08.147⟩
Thin Solid Films, 2008, 517, pp.327-330. ⟨10.1016/j.tsf.2008.08.147⟩
Thin Solid Films, Elsevier, 2008, 517, pp.327-330. ⟨10.1016/j.tsf.2008.08.147⟩
Thin Solid Films, 2008, 517, pp.327-330. ⟨10.1016/j.tsf.2008.08.147⟩
The use of Ge nanostructures in microelectronic devices requires quite low thermal budget processes. In this paper, we report on the development of a technique which enables the localization of laser thermal annealing. Dielectric layers have been dep
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::4a870a2f78f09a4477a61bc6d8b9855c
https://doi.org/10.1016/j.tsf.2008.08.147
https://doi.org/10.1016/j.tsf.2008.08.147
Autor:
Daniel Bouchier, Véronique Mathet, Davide Cammilleri, Dominique Débarre, Jacques Boulmer, Mathieu Halbwax, Frédéric Fossard, Huu Lam Nguyen, Vy Yam
Publikováno v:
ECS Transactions. 3:593-598
Relaxed germanium was deposited following a low temperature-high temperature procedure by ultrahigh vacuum chemical vapor deposition in Si trenches opened through a SiO2 mask. The resulting growth is selective, the germanium fills the Si trenches and
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b8b2bc3b252f995c4a3a0376745039b8
https://doi.org/10.1149/1.2355856
https://doi.org/10.1149/1.2355856
Autor:
Dominique Débarre, G. Kerrien, Jacques Boulmer, Kuniyuki Kakushima, C. Laviron, M. Hernandez, Thierry Sarnet, Alain Bosseboeuf, Nourdin Yaakoubi, Elisabeth Dufour-Gergam, Tarik Bourouina, J. Venturini
Publikováno v:
Applied Surface Science. 247:537-544
The future CMOS generations for microelectronics will require advanced doping techniques capable to realize ultra-shallow, highly-doped junctions with abrupt profiles. Recent experiments have shown the potential capabilities of laser processing of Ul
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::e67293178df8972e00aeb0c363080f8c
https://doi.org/10.1016/j.apsusc.2005.01.172
https://doi.org/10.1016/j.apsusc.2005.01.172
Publikováno v:
Journal of Applied Physics. 90:449-455
Carbon is incorporated into Si(100) to form a thin polycrystalline layer of SiC by laser melting the Si surface after adsorption of propene in ultrahigh vacuum. The SiC layer of thickness up to 25 nm is polycrystalline. Crystallites of size ≈100 nm
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::935828654743362cf6645cd80a05712c
https://doi.org/10.1063/1.1379054
https://doi.org/10.1063/1.1379054
Publikováno v:
Physical Review B. 55:13904-13915
The kinetics of thermal desorption from an excimer-laser-melted surface, on which diffusion into the bulk competes with desorption, is numerically evaluated and compared with a variety of experimental data for the case of Cl on Si: Auger electron spe
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c13b3878eccd54f4f2df76722f910052
https://doi.org/10.1103/physrevb.55.13904
https://doi.org/10.1103/physrevb.55.13904
Autor:
P. Roca i Cabarrocas, C. Clerc, Christian Godet, C. Guedj, F. Houze, Daniel Bouchier, G. Calvarin, D. Mencaraglia, Jacques Boulmer
Publikováno v:
Applied Surface Science. 102:28-32
Si 1− x − y Ge x C y films have been grown by pulsed laser induced epitaxy (PLIE) from C + implanted pseudomorphic Si 1− x Ge x films and from hydrogenated amorphous a-SiGeC:H films deposited on Si(001). The laser treated samples are examined b
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8c3a1a6ab8f9288b84fceaba7626803f
https://doi.org/10.1016/0169-4332(96)00013-x
https://doi.org/10.1016/0169-4332(96)00013-x
Autor:
J.-P. Budin, Jacques Boulmer, A. Desmur, J.-B. Ozenne, Bernard Bourguignon, Dominique Débarre, A. Aliouchouche
Publikováno v:
Journal of Applied Physics. 76:3081-3087
Laser‐induced modification of dopant profile and desorption of the dopant are measured for silicon and several dopants (B, As, Sb). The experimental conditions are laser melting and chemical etching by chlorine, and laser annealing. The laser fluen
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::83cdf26f2779b7e283b26153688b0fc0
https://doi.org/10.1063/1.357490
https://doi.org/10.1063/1.357490
Autor:
T. Kociniewski, Guy Fishman, Olivier Kermarrec, T.-P. Ngo, R. Jakomin, Xavier Checoury, Isabelle Sagnes, Daniel Bensahel, Sébastien Sauvage, Philippe Boucaud, Dominique Débarre, M. El Kurdi, Jean-Francois Damlencourt, Jacques Boulmer
Publikováno v:
2009 6th IEEE International Conference on Group IV Photonics.
Using a 30 band k.p formalism, we calculate the band structure and the optical gain of tensilely-strained germanium. We show that the room temperature emission of germanium-on-insulator can be significantly enhanced by n-doping of germanium.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e137450866205edac5abf9d805dc26de
https://doi.org/10.1109/group4.2009.5338363
https://doi.org/10.1109/group4.2009.5338363