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pro vyhledávání: '"Jacoby Yoon"'
Autor:
Jung Ho Park, Jeong-Geun Kwak, Tae-Woo Kim, Dae-Hyun Kim, Seung-Woo Son, Ji-Min Baek, Jong-Keun Park, Jacoby Yoon, Jung-Hee Lee, Dong-Soo Bang
Publikováno v:
Solid-State Electronics. 147:58-62
We have fabricated and characterized Lg = 0.5 μm In0.52Al0.48As/In0.7Ga0.3As pseudomorphic high-electron-mobility-transistors (PHEMTs) on a 3-inch InP substrate. Stepper-based photo-lithography was used in all the process steps for device fabricatio
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::da6e3ee068313ddca8c47644b439fb86
https://doi.org/10.1016/j.sse.2018.05.010
https://doi.org/10.1016/j.sse.2018.05.010
