Zobrazeno 1 - 10
of 143
pro vyhledávání: '"Jacobus W Swart"'
Autor:
Konstantin Baranov, Ivan Reznik, Sofia Karamysheva, Jacobus W. Swart, Stanislav Moshkalev, Anna Orlova
Publikováno v:
Technologies, Vol 11, Iss 4, p 93 (2023)
Colloidal nanoparticles, and quantum dots in particular, are a new class of materials that can significantly improve the functionality of photonics, electronics, sensor devices, etc. The main challenge addressed in the article is modification of the
Externí odkaz:
https://doaj.org/article/2f75117e4f0b4b58a3c9d3a76ae03704
Autor:
Jose Alexandre Diniz, Rodrigo REIGOTA César, Angelica Denardi Barros, Jair Fernandes Souza, Huziel Ramos Souto, Fernando cesar Rufino, Rentao Massaroto, Jacobus W Swart
Publikováno v:
ECS Transactions. 111:261-271
This review presents the technological evolution of devices based on Ion Sensitive Field Effect Transistors (ISFETs), which try to go along with the Metal Oxide Semiconductor FET (MOSFET) technology. Furthermore, many examples of the applications as
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b7f63efc04a10c940dca7167c8786440
https://doi.org/10.1149/11101.0261ecst
https://doi.org/10.1149/11101.0261ecst
Publikováno v:
IEEE Microwave Magazine. 23:45-54
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7fc9898d946c6c25348b17cac3557cf1
https://doi.org/10.1109/mmm.2021.3136685
https://doi.org/10.1109/mmm.2021.3136685
Autor:
Salvador Pinillos Gimenez, Christian Renaux, Jacobus W. Swart, Egon Henrique Salerno Galembeck, Denis Flandre
Publikováno v:
IEEE Journal of the Electron Devices Society, Vol 9, Pp 415-423 (2021)
I E E E Journal of the Electron Devices Society, Vol. 9, p. 415-423 (2021)
I E E E Journal of the Electron Devices Society, Vol. 9, p. 415-423 (2021)
This paper describes the influence of Longitudinal Corner Effect (LCE effect) and PArallel Connection of Metal–Oxide–Semiconductor Field-Effect Transistors (MOSFETs) with Different Channel Lengths Effect (PAMDLE effect) of Diamond (hexagonal gate
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::c72a07d3aa20c38caaad59be48a7e423
https://ieeexplore.ieee.org/document/9397259/
https://ieeexplore.ieee.org/document/9397259/
Autor:
Ezio M. Bastida, Saulo Finco, Roberto R. Panepucci, Stefan Tenenbaum, Jacobus W. Swart, Celio A. Finardi, Andre F. Ponchet
Publikováno v:
Journal of Integrated Circuits and Systems. 12:7-17
This article presents a complete design flow of a low noise transimpedance amplifier for 10 Gbps optoelectronic receivers. The proposed topology is based on the shunt-shunt structure with negative feedback. A set of equations was deduced from the fre
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ce737af281bb45536b2edd7b2fae525e
https://doi.org/10.29292/jics.v12i1.445
https://doi.org/10.29292/jics.v12i1.445
Autor:
Antonio G. Souza Filho, J. V. Silveira, Stanislav A. Moshkalev, Jacobus W. Swart, Raluca Savu, Josué Mendes Filho
Publikováno v:
Journal of Integrated Circuits and Systems. 9:103-109
A new approach to improve the electrical and thermal contacts between multi-walled carbon nanotubes and metallic electrodes was developed by using spatially localized laser heating coupled with a micro Raman equipment. After the deposition by dielect
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a5ee3e9330e498b7507bdd92e2e19508
https://doi.org/10.29292/jics.v9i2.395
https://doi.org/10.29292/jics.v9i2.395
Autor:
José Alexandre Diniz, Jacobus W. Swart, A. G. Felicio, J. Godoy Fo, M. A. A. Pudenzi, Ioshiaki Doi
Publikováno v:
Journal of Integrated Circuits and Systems. 1:41-47
Silicon oxynitride (SiOxNy) insulators have been obtained by nitrogen ion implantation into Si substrates prior to conventional or rapid thermal oxidation. These films have been used as gate insulators in nMOSFETs and MOS capacitors. nMOSFET electric
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b1f896fcedb6bae17ebba4d858d1afe9
https://doi.org/10.29292/jics.v1i2.263
https://doi.org/10.29292/jics.v1i2.263
Publikováno v:
Microelectronics Reliability. 135:114592
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2c5902a2258bdcae8f8a5884df768a4f
https://doi.org/10.1016/j.microrel.2022.114592
https://doi.org/10.1016/j.microrel.2022.114592
Publikováno v:
7th International Electronic Conference on Sensors and Applications.
Several CMOS imager sensors were proposed to obtain high dynamic range imager (>100 dB). However, as drawback these imagers implement a large number of transistors per pixel resulting in a low fill factor, high power consumption and high complexity C
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2cbf2cf41c8ea669f0cbbe1c4e8169fb
https://doi.org/10.3390/ecsa-7-08235
https://doi.org/10.3390/ecsa-7-08235
Autor:
Salomao Moraes da Silva Junior, Johan Stiens, Jacobus W. Swart, Vladimir Matvejev, Stanislav A. Moshkalev, Cathleen De Tandt, Roberto Lacerda de Orio, W. Vandermeiren, Yuchen Zhang
Publikováno v:
Journal of Integrated Circuits and Systems. 13:1-5
This paper reports on the performance of a sub-THz liquid sensor tool coupled to a microfluidic platform. Non-invasive, non-destructive and on-line measurements are demonstrated for the determination of ethanol concentration and for controlling via m
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::e62a2f5139627d5d75a42c4d1df38675
https://doi.org/10.29292/jics.v13i2.10
https://doi.org/10.29292/jics.v13i2.10