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pro vyhledávání: '"Jacobsen, K. Stokbro K. W."'
Publikováno v:
Surface Science 360, 221(1996)
We present molecular-dynamics simulations of the Si(100) surface in the temperature range 1100-1750K. To describe the total energy and forces we use the Effective-Medium Tight-Binding model. The defect-free surface is found to melt at the bulk meltin
Externí odkaz:
http://arxiv.org/abs/cond-mat/9604012
