Zobrazeno 1 - 10
of 16
pro vyhledávání: '"Jacob Woodruff"'
Autor:
Scott T. Ueda, Aaron McLeod, Youhwan Jo, Zichen Zhang, Jacob Spiegelman, Jeff Spiegelman, Dan Alvarez, Daniel Moser, Ravindra Kanjolia, Mansour Moinpour, Jacob Woodruff, Kyeongjae Cho, Andrew C. Kummel
Publikováno v:
Journal of Materials Chemistry C. 10:5707-5715
The use of a heavier noble gas such as Kr in atomic layer annealing results in higher crystallinity due to higher momentum transfer leading to a more localized and intense surface heating effect occurring over picosecond timescales.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7d003ec8b0db500c3ffd8289f1616021
https://doi.org/10.1039/d1tc05194f
https://doi.org/10.1039/d1tc05194f
Autor:
Mansour Moinpour, Jacob Spiegelman, Michael Breeden, Charles H. Winter, Victor Wang, Ravindra K. Kanjolia, Srinivas D. Nemani, Jacob Woodruff, Steven Wolf, Andrew C. Kummel, Ashay Anurag, Daniel Moser, Keith Tatseun Wong
Publikováno v:
ACS Applied Nano Materials. 4:8447-8454
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6379f6f2e79620f409d4246ee7e47345
https://doi.org/10.1021/acsanm.1c01639
https://doi.org/10.1021/acsanm.1c01639
Autor:
Michael Breeden, Victor Wang, Ravindra Kanjolia, Mansour Moinpour, Jacob Woodruff, Harsono Simka, Andrew Kummel
Publikováno v:
2022 IEEE International Interconnect Technology Conference (IITC).
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f772c1a4d01baee71eeba80298d190b7
https://doi.org/10.1109/iitc52079.2022.9881300
https://doi.org/10.1109/iitc52079.2022.9881300
Autor:
Aaron J. McLeod, Scott T. Ueda, Ping C. Lee, Jeff Spiegelman, Ravindra Kanjolia, Mansour Moinpour, Jacob Woodruff, Andrew C. Kummel
Publikováno v:
Thin Solid Films. 768:139717
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::56a17ced7f53fa065f22c2f152df6fe6
https://doi.org/10.1016/j.tsf.2023.139717
https://doi.org/10.1016/j.tsf.2023.139717
Autor:
Joel R, Schneider, Camila, de Paula, Jacqueline, Lewis, Jacob, Woodruff, James A, Raiford, Stacey F, Bent
Publikováno v:
Small (Weinheim an der Bergstrasse, Germany). 18(9)
Achieving facile nucleation of noble metal films through atomic layer deposition (ALD) is extremely challenging. To this end, η
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=pmid________::3d52e36fdb24a5319123c91c29afbab1
https://pubmed.ncbi.nlm.nih.gov/34989132
https://pubmed.ncbi.nlm.nih.gov/34989132
Autor:
Joel Schneider, Camila de Paula, Jacqueline Lewis, Jacob Woodruff, James Raiford, Stacey Bent
Achieving facile nucleation of noble metal films through atomic layer deposition (ALD) is extremely challenging. To this end, η4-2,3-dimethylbutadiene ruthenium tricarbonyl (Ru(DMBD)(CO)3), a zero-valent complex, has recently been reported to achiev
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5ef742573f4ae9c9d027d41a75cc10a7
https://doi.org/10.26434/chemrxiv-2021-kj8n3
https://doi.org/10.26434/chemrxiv-2021-kj8n3
Autor:
James A. Raiford, Jacob Woodruff, Camila de Paula, Jacqueline Lewis, Joel R. Schneider, Stacey F. Bent
Achieving facile nucleation of noble metal films through atomic layer deposition (ALD) is extremely challenging. To this end, η4-2,3-dimethylbutadiene ruthenium tricarbonyl (Ru(DMBD)(CO)3), a zero-valent complex, has recently been reported to achiev
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f3d77f14061cf2b27fe41ccf32c26b66
https://doi.org/10.33774/chemrxiv-2021-kj8n3
https://doi.org/10.33774/chemrxiv-2021-kj8n3
Autor:
Charles L. Dezelah, William E. Kaden, Parag Banerjee, Asim Khaniya, Duy Le, Talat S. Rahman, Ravindra K. Kanjolia, Jacob Woodruff, Zhengning Gao
Publikováno v:
Chemistry of Materials. 31:1304-1317
Ruthenium (Ru) films are deposited using atomic layer deposition (ALD), promoted by a self-catalytic reaction mechanism. Using zero-valent, η4-2,3-dimethylbutadiene Ruthenium tricarbonyl (Ru(DMBD)(CO)3) and H2O, Ru films are deposited at a rate of 0
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f9f462918949486ede3223cb16c3a19d
https://doi.org/10.1021/acs.chemmater.8b04456
https://doi.org/10.1021/acs.chemmater.8b04456
Autor:
Victor Wang, Daniel Moser, Mansour Moinpour, Ashay Anurag, Michael Breeden, Steven Wolf, Andrew C. Kummel, Ravi Kanjolia, Jacob Woodruff
Publikováno v:
2020 IEEE International Interconnect Technology Conference (IITC).
The atomic layer deposition of cobalt using Co(DAD) 2 and tertiary-butyl amine (TBA) has nearly infinite selectivity (>1000 cycles) on metal vs. insulator (SiO 2 or low-k SiCOH) planar samples. However, on patterned samples, selectivity under identic
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::50dbd082f613627f7d67072e1c4dc6ef
https://doi.org/10.1109/iitc47697.2020.9515640
https://doi.org/10.1109/iitc47697.2020.9515640
Autor:
Joel R. Schneider, Camila Paula, Jacqueline Lewis, Jacob Woodruff, James A. Raiford, Stacey F. Bent
Publikováno v:
Small. 18:2105513
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4efc490c227056109f670deac7e7acf5
https://doi.org/10.1002/smll.202105513
https://doi.org/10.1002/smll.202105513