Optimization of photonic crystal $60^{\circ}$ waveguide bends for broadband and slow-light transmission

Autor: Peter Ingo Borel, Jacob Fage-Pedersen, Amélie Têtu, Lars Hagedorn Frandsen, Andrei V. Lavrinenko

Publikováno v: Lavrinenko, A V, Têtu, A, Frandsen, L H, Fage-Pedersen, J & Borel, P I 2007, ' Optimization of photonic crystal 60 o waveguide bends for broadband and slow-light transmission ', Applied Physics B, vol. 87, no. 1, pp. 53-56 . https://doi.org/10.1007/s00340-006-2507-4
Lavrinenko, A V, Tetu, A, Frandsen, L H, Fage-Pedersen, J & Borel, P I 2007, ' Optimization of photonic crystal 60 degrees waveguide bends for broadband and slow-light transmission ' Applied Physics B, no. 87, pp. 53-56 . https://doi.org/10.1007/s00340-006-2507-4

We present results on broadband transmission through photonic crystal waveguide bends optimized for slow-light modes. Theoretical analysis and topology optimization are complemented by experimental verification of designs fabricated in SOI material.

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::6e036eab9ef97d296bc50e6fdc0e23df
https://doi.org/10.1007/s00340-006-2507-4

Boron and phosphorus diffusion in strained and relaxed Si and SiGe

Autor: A. Nylandsted Larsen, J. Lundsgaard Hansen, Jacob Fage-Pedersen, N. Zangenberg

Publikováno v: Journal of Applied Physics. 94:3883-3890

The diffusion of boron and phosphorus has been investigated in SiGe grown by molecular beam epitaxy. The analysis was done in relaxed Si1−xGex for x=0, 0.01, 0.12, and 0.24 for B and x=0, 0.07, 0.12, 0.24, and 0.40 for P. B diffusion in relaxed sam

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::a193dc3edba11abb9702acb33f108c06
https://doi.org/10.1063/1.1602564

Si self-interstitial injection from Sb complex formation in Si

Autor: Jacob Fage-Pedersen, A. Nylandsted Larsen, J. Lundsgaard Hansen, Peter I. Gaiduk

Publikováno v: Journal of Applied Physics. 88:3254-3259

It has recently been established that Si self-interstitials are generated during annealing of high-concentration Sb layers in Si. In the present work, we make use of samples grown with molecular-beam epitaxy. We monitor, at different times and temper

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::4fd5348df016a200e02bc2c8e1c7fb41
https://doi.org/10.1063/1.1289234

Sn-Background-Induced Diffusion Enhancement of Sb in Si

Autor: Margareta Linnarsson, Jacob Fage-Pedersen, John Lundsgaard Hansen, Arne Nylandsted Larsen, Peter I. Gaiduk

Publikováno v: Physical Review Letters. 81:5856-5859

The diffusion of Sb in Si has been studied as a function of Sn-background concentration, and enhanced Sb diffusion is observed for backgrounds higher than CSn1 = 5 A— 1019 cm-3. This concentration for the onset of enhanced diffusion is significantl

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::12a4eeffda786ce06f7fa369c744e6c7
https://doi.org/10.1103/physrevlett.81.5856

Planar glass devices for efficient periodic poling

Autor: Rune Shim Jacobsen, Jacob Fage-Pedersen, Martin Kristensen

Publikováno v: Fage-Pedersen, J, Jacobsen, R & Kristensen, M 2005, ' Planar glass devices for efficient periodic poling ', Optics Express, vol. 13, no. 21, pp. 8514-8519 .

We demonstrate that frequency-converting devices of high quality can be realised with glass poling. The devices, made with silica-on-silicon technology, are poled with periodic, embedded electrodes, and used for second-harmonic generation. We obtain

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::49a34b0fd2e1e0fccbe1b081ac088bb9
https://pubmed.ncbi.nlm.nih.gov/19498881