Zobrazeno 1 - 5
of 5
pro vyhledávání: '"Jacob Chenchen Wang"'
Autor:
Guchang Han, Tran, Michael, Cheow Hin Sim, Jacob Chenchen Wang, Eason, Kwaku, Sze Ter Lim, Aihong Huang
Publikováno v:
Journal of Applied Physics; 2015, Vol. 117 Issue 17, p17B515-1-17B515-4, 4p, 5 Graphs
Autor:
Pik Kee Tan, Zhihong Mai, Taiebeh Tahmasebi, Yuzhe Zhao, Binghai Liu, Zhili Dong, Zhiqiang Mo, Kenny Ong, Junming Xue, Hanwei Teo, Jacob ChenChen Wang, Dimitri Houssameddine, Jeffrey Lam
Transmission electron microscopy (TEM) is widely used for physical characterization of CoFeB based magnetic tunneling junctions (MTJ) with its atomic-scale resolution. However, highly energetic electron radiation during TEM analysis may cause phase a
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::c36016dfbd9701b7505dd753c3fb256a
https://hdl.handle.net/10356/143601
https://hdl.handle.net/10356/143601
Autor:
Sze Ter Lim, Kwaku Eason, Guchang Han, Jacob Chenchen Wang, Cheow Hin Sim, Aihong Huang, Michael Tran
Publikováno v:
Journal of Applied Physics. 117:17B515
In a magnetic tunnelling junction (MTJ) with perpendicular magnetic anisotropy (PMA), offset field (Ho) of the free layer is usually controlled by using a synthetic antiferromagnetic (SAF) coupling structure, which is composed of an antiferromagnetic
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0605306d0027a2bcee7ac6d7a939147b
https://doi.org/10.1063/1.4913942
https://doi.org/10.1063/1.4913942
Publikováno v:
Journal of Applied Physics. 109:07B749
We report on a study of shape effect on the flux guide (FG) reader output at an ultrahigh recording density, using micromagnetic simulations. A FG with a sharp, protruding reading edge is ineffective in magnetization reversal but is less susceptible
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4d9c99af4645f84515562494a2e1bcf8
https://doi.org/10.1063/1.3561794
https://doi.org/10.1063/1.3561794
Autor:
Lap Chan, L. F. Toh, V. L. Lo, Jacob Chenchen Wang, Wai Shing Lau, Seow Wei Lai, Peizhen Yang, S. Y. Siah
Publikováno v:
Journal of Applied Physics. 108:034506
This paper investigates the physics behind the overall on-current (Ion) improvement of n-channel metal-oxide-semiconductor (NMOS) transistors by uniaxial tensile stress. The strain-induced change in subthreshold off-current (Ioff) is related to the f
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6ac2998d83be449fff763ec17f17db83
https://doi.org/10.1063/1.3447843
https://doi.org/10.1063/1.3447843