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pro vyhledávání: '"Jaclyn K. Sprenger"'
Electron-Enhanced Atomic Layer Deposition of Boron Nitride Thin Films at Room Temperature and 100 °C
Autor:
Jaclyn K, Sprenger, Huaxing, Sun, Andrew S, Cavanagh, Alexana, Roshko, Paul T, Blanchard, Steven M, George
Publikováno v:
J Phys Chem C Nanomater Interfaces
Electron-enhanced atomic layer deposition (EE-ALD) was used to deposit boron nitride (BN) thin films at room temperature and 100 °C using sequential exposures of borazine (B(3)N(3)H(6)) and electrons. Electron-stimulated desorption (ESD) of hydrogen
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=pmid________::2cc6281f056f163e90500bc8d24fd97b
https://pubmed.ncbi.nlm.nih.gov/33101567
https://pubmed.ncbi.nlm.nih.gov/33101567
Electron-Enhanced Atomic Layer Deposition of Boron Nitride Thin Films at Room Temperature and 100 °C
Autor:
Paul T. Blanchard, Jaclyn K. Sprenger, Andrew S. Cavanagh, Huaxing Sun, Steven M. George, Alexana Roshko
Publikováno v:
The Journal of Physical Chemistry C. 122:9455-9464
Electron-enhanced atomic layer deposition (EE-ALD) was used to deposit boron nitride (BN) thin films at room temperature and 100 °C using sequential exposures of borazine (B3N3H6) and electrons. Electron-stimulated desorption (ESD) of hydrogen surfa
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c75d79803a92028272d1fa7327a9d7c6
https://doi.org/10.1021/acs.jpcc.8b00796
https://doi.org/10.1021/acs.jpcc.8b00796
Autor:
Jaclyn K. Sprenger, Kathryn J. Wahl, Andrew S. Cavanagh, Huaxing Sun, Alexana Roshko, Steven M. George
Publikováno v:
Chemistry of Materials. 28:5282-5294
Low energy electrons may provide mechanisms to enhance thin film growth at low temperatures. As a proof of concept, this work demonstrated the deposition of gallium nitride (GaN) films over areas of ∼5 cm(2) at room temperature and 100 °C using el
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::3db0d12fe441c480ce27716d0163b051
https://doi.org/10.1021/acs.chemmater.6b00676
https://doi.org/10.1021/acs.chemmater.6b00676