Zobrazeno 1 - 10
of 69
pro vyhledávání: '"Jacky Huang"'
Publikováno v:
ACS Omega, Vol 5, Iss 13, Pp 7537-7544 (2020)
Externí odkaz:
https://doaj.org/article/cb2577efbe8e456989a1ae3078c6a4a6
Publikováno v:
2022 China Semiconductor Technology International Conference (CSTIC).
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8a2bc32007d7833537315af10faa2910
https://doi.org/10.1109/cstic55103.2022.9856740
https://doi.org/10.1109/cstic55103.2022.9856740
Publikováno v:
In Chemical Engineering Science 2010 65(6):1964-1975
Publikováno v:
Journal of Clinical Oncology. 40:2054-2054
2054 Background: Deep learning algorithms trained to segment brain tumors from magnetic resonance imaging (MRI) perform well in ideal conditions supplied by curated datasets. An example is the MICCAI BraTS 2018 dataset, which provides a set of four M
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::855aa05b7ed4ab6cbe13c225349b84c0
https://doi.org/10.1200/jco.2022.40.16_suppl.2054
https://doi.org/10.1200/jco.2022.40.16_suppl.2054
Publikováno v:
2021 5th IEEE Electron Devices Technology & Manufacturing Conference (EDTM).
In this paper, a 5 nm FinFET flow was built using the SEMulator3D® virtual fabrication platform. Different STI (shallow trench isolation) recess profiles were investigated using the pattern-dependent etch capabilities of SEMulator3D, including chang
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6d41626a0da3d1982a8f2d8a8c4c5f79
https://doi.org/10.1109/edtm50988.2021.9420976
https://doi.org/10.1109/edtm50988.2021.9420976
Publikováno v:
2021 China Semiconductor Technology International Conference (CSTIC).
In this paper, we study the effect of poly corner residue during a 5nm FinFET poly etch process using virtual fabrication. A systemic investigation was performed to understand the impact of poly corner residue on hard failure modes and device perform
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::69e8195aefd31c53be60a0d312c59c52
https://doi.org/10.1109/cstic52283.2021.9461583
https://doi.org/10.1109/cstic52283.2021.9461583
Autor:
A. Nannipieri, Munkang Choi, P. Asenov, D. Sherlekar, Jaehyun Lee, L. S. Melvin, L. Sponton, Binjie Cheng, S. Jones, X-W. Lin, Victor Moroz, Jacky Huang
Publikováno v:
2020 IEEE International Electron Devices Meeting (IEDM).
Instead of marching from one crisply defined technology node to the next with an uncertain timeline, industry is transitioning toward annual technology updates driven by a schedule, but with an uncertain transistor density increase. Full node updates
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::46a39fd7c093310b642aea047fcd08e0
https://doi.org/10.1109/iedm13553.2020.9372010
https://doi.org/10.1109/iedm13553.2020.9372010
Publikováno v:
PLoS ONE, Vol 8, Iss 2, p e57050 (2013)
Prevention of the initiation of biofilm formation is the most important step for combating biofilm-associated pathogens, as the ability of pathogens to resist antibiotics is enhanced 10 to 1000 times once biofilms are formed. Genes essential to bacte
Externí odkaz:
https://doaj.org/article/bda63e22537344b9833253b17d12506a
Publikováno v:
2020 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD).
In this paper, a wiggling active area (fin) in an advanced 1x DRAM process was analyzed and modeled using the pattern-dependent etch simulation capabilities of the SEMulator3D® semiconductor modeling software. Nonuniformity in sidewall passivation c
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5f5ac6045307de31c0d1e4ba9b1e8fc7
https://doi.org/10.23919/sispad49475.2020.9241640
https://doi.org/10.23919/sispad49475.2020.9241640
Publikováno v:
2020 China Semiconductor Technology International Conference (CSTIC).
This paper provides an example of yield enhancement using virtual fabrication. A 6 transistors based static random access memory example on 7nm node technology was used in this case study. Yield loss caused by via contact-metal edge placement error w
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::abb8857da05aa2dc2cede1bcde4a573f
https://doi.org/10.1109/cstic49141.2020.9282443
https://doi.org/10.1109/cstic49141.2020.9282443