Zobrazeno 1 - 10
of 10
pro vyhledávání: '"Jack Knoll"'
Publikováno v:
IEEE Open Journal of Power Electronics, Vol 4, Pp 549-560 (2023)
This article presents a printed circuit board (PCB) -embedded 1.2 kV silicon carbide (SiC) metal-oxide-semiconductor field-effect transistor (MOSFET) half-bridge package for a 22 kW electric vehicle (EV) on-board charger (OBC). The package meets the
Externí odkaz:
https://doaj.org/article/ec5a5f477f944457bfea01e6253320e4
Publikováno v:
2022 IEEE Energy Conversion Congress and Exposition (ECCE).
Publikováno v:
2022 IEEE Energy Conversion Congress and Exposition (ECCE).
Publikováno v:
2021 IEEE Energy Conversion Congress and Exposition (ECCE).
Surface-mount packages offer Silicon Carbide (SiC) MOSFETs with many advantages, including highly reduced parasitic inductance, smaller size, and reduced manufacturing cost. However, in high power applications, the thermal performance of the discrete
Publikováno v:
2021 IEEE Energy Conversion Congress and Exposition (ECCE).
This work presents a PCB-embedded silicon carbide (SiC) MOSFET half-bridge module with low loop inductances, double-sided cooling, and integrated gate driver. 1.2 kV SiC MOSFET die are embedded in FR4 using a process developed by AT&S and are electri
Autor:
Christina DiMarino, Ruizhe Zhang, Cyril Buttay, Guo-Quan Lu, Kohei Sasaki, Boyan Wang, Jack Knoll, Yuhao Zhang, Ming Xiao, Joseph Spencer
Publikováno v:
ECS Transactions
ECS Transactions, Electrochemical Society, Inc., 2021, 104 (5), pp.21-32. ⟨10.1149/10405.0021ecst⟩
ECS Transactions, Electrochemical Society, Inc., 2021, 104 (5), pp.21-32. ⟨10.1149/10405.0021ecst⟩
International audience
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::230eb09c740a2a11b32abf6c7a560db4
https://hal.archives-ouvertes.fr/hal-03366208/document
https://hal.archives-ouvertes.fr/hal-03366208/document
Autor:
Jack Knoll, Cyril Buttay, Christina DiMarino, Reza Ghandi, Mina Shawky, Sheng-Hung Yen, Stacey Kennerly, Ibrahim M. Eshera
Publikováno v:
2021 IEEE Applied Power Electronics Conference and Exposition (APEC).
This work demonstrates a novel charge-balanced (CB) silicon carbide (SiC) MOSFET that boasts a specific on-resistance of 10 mΩ•cm2 at 4.5 kV breakdown voltage, surpassing the 1-D SiC unipolar limit. This is achieved through buried p-doped regions
Seasonal variation in the rate of evaporative water loss in the kangaroo rat, Dipodomys panamintinus
Autor:
Jack Knoll, Joseph Scelza
Publikováno v:
Comparative Biochemistry and Physiology Part A: Physiology. 71:579-584
1. 1. Evaporative water loss was measured as a function of temperature, season and grouping in the kangaroo rat, Dipodomys panamintinus for a one year period. 2. 2. Three groups of Panamint kangaroo rats were set up and studied during the various cha
Autor:
Jack Knoll, Joseph Scelza
Publikováno v:
Comparative Biochemistry and Physiology Part A: Physiology. 65:77-84
1. 1. Seasonal acclimatization effects on oxygen consumption, body temperature, and body weight were evaluated in three different experimental groups of Dipodomys panamintinus. 2. 2. Body weights of wild field as well as captive animals housed in out
Autor:
Joseph Scelza, Jack Knoll
Publikováno v:
Comparative Biochemistry and Physiology Part A: Physiology. 52:339-341
1. The rates of oxygen consumption, carbon dioxide production and evaporative water loss in relation to five different temperatures were determined for Dipodomys panamintinus with the animals in a non-post-absorptive state to more closely approximate