Zobrazeno 1 - 10
of 28
pro vyhledávání: '"Jack Jau"'
Autor:
Philippe Leray, Sandip Halder, Kevin Liu, Pengcheng Zhang, Paolo Di Lorenzo, Fei Wang, Wei Fang, Jack Jau
Publikováno v:
SPIE Proceedings.
With the continuous shrink of design rules from 14nm to 10nm to 7nm, conserving process windows in a high volume manufacturing environment is becoming more and more difficult. Masks, scanners, and etch processes have to meet very tight specifications
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::897dae54b516aaa03e8dd03471b66ac3
https://doi.org/10.1117/12.2218971
https://doi.org/10.1117/12.2218971
Autor:
Jack Jau, Daniel Corliss, Hung-Yu Tien, Karen D. Badger, Luciana Meli, Jed H. Rankin, Ravi K. Bonam, Fei Wang, Chris Lei, Christina Turley, Wei Fang, Scott Halle, Xiaoxia Huang, Zhenqing John Qi, Acer Chou, Ivy Wu, Chiyan Kuan
Publikováno v:
Extreme Ultraviolet (EUV) Lithography VII.
Over the past few years numerous advancements in EUV Lithography have proven its feasibility of insertion into High Volume Manufacturing (HVM).1, 2 A lot of progress is made in the area of pellicle development but a commercially solution with related
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::82d1f59408b30891254dd91f12b6c5b5
https://doi.org/10.1117/12.2219601
https://doi.org/10.1117/12.2219601
Autor:
Wei Fang, Jack Jau, Daniel Corliss, Ravi K. Bonam, Chanro Park, Fei Wang, Hung-Yu Tien, Scott Halle
Publikováno v:
SPIE Proceedings.
EUV Lithography is aimed to be inserted into mainstream production for sub-20nm pattern fabrication. Unlike conventional optical lithography, frequent defectivity monitors (adders, repeaters etc.) are required in EUV lithography. Due to sub-20nm patt
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ee171e22bb211dd4352943faf00f914e
https://doi.org/10.1117/12.2048284
https://doi.org/10.1117/12.2048284
Publikováno v:
ASMC 2013 SEMI Advanced Semiconductor Manufacturing Conference.
Understanding the effect of defect sizes and their impact on EUV lithography is an ongoing challenge due to continued scaling of devices [1], [2]. The objective of this study is to assess printability of defects on post develop photoresist wafers and
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::370f75e0ad50ed21de15f98024429c8d
https://doi.org/10.1109/asmc.2013.6552751
https://doi.org/10.1109/asmc.2013.6552751
Autor:
Chia-Wen Lin, Jack Jau, Yan Zhao, Tadahiko Takikawa, Chiyan Kuan, Fei Wang, Long Ma, Takeya Shimomura, Shogo Narukawa, Naoya Hayashi, Tsukasa Abe
Publikováno v:
SPIE Proceedings.
EUV lithography (EUVL) is the most promising solution for 16nm HP node semiconductor device manufacturing and beyond. The fabrication of defect free EUV mask is one of the most challenging roadblocks to insert EUVL into high volume manufacturing (HVM
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a1c310c31a1595864b44be56bb77d6cc
https://doi.org/10.1117/12.976017
https://doi.org/10.1117/12.976017
Autor:
Fei Wang, Shuen Cheng Lei, Shih-tsung Chen, Derek Tomlison, Jack Jau, Carol Boye, Theodorus Standeart
Publikováno v:
2012 SEMI Advanced Semiconductor Manufacturing Conference.
This paper proposes a combination use of e-beam inspection (EBI) for defect detection and CD Uniformity (CDU) measurement. The experiments are based on 14nm FinFET device manufactured on SOI substrate. A 5nm pixel size is utilized to perform hot spot
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8ccd002bdfeef1139839447aa5c4e0eb
https://doi.org/10.1109/asmc.2012.6212929
https://doi.org/10.1109/asmc.2012.6212929
Autor:
Julie Lee, Chung Han Lee, Shih-tsung Chen, Derek Tomlinson, Michael Daniel Monkowski, Fei Wang, Shuen Cheng Lei, Jack Jau, Wei Fang, Deborah A. Ryan, Oliver D. Patterson
Publikováno v:
SPIE Proceedings.
Effectively patterning the intended design on the wafer for all possible geometries allowed by the design rule document is one of the most critical challenges for semiconductor manufacturing. Despite new lithography techniques like OPC, double patter
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8a6641f164645b2789e2bd8ca76862b7
https://doi.org/10.1117/12.918072
https://doi.org/10.1117/12.918072
Autor:
Wei Fang, Carol Boye, Jack Jau, Hong Xiao, John G. Gaudiello, Theodorus E. Standaert, Long E. Ma, Fei Wang, Yan Zhao, Jennifer Fullam, Xu Zhang, Derek Tomlinson
Publikováno v:
SPIE Proceedings.
In this paper, we tested a novel methodology of measuring critical dimension (CD) uniformity, or CDU, with electron beam (e-beam) hotspot inspection and measurement systems developed by Hermes Microvision, Inc. (HMI). The systems were used to take im
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f6f1e21473a15e999b4a2cd1ea9c024f
https://doi.org/10.1117/12.879910
https://doi.org/10.1117/12.879910
Autor:
Hiroshi Mohri, Jack Jau, Tadahiko Takikawa, Long Eric Ma, Yuichi Inazuki, Fei Wang, Chiyan Kuan, Takeya Shimomura, Kawashima Satoshi, Naoya Hayashi, Tsukasa Abe, Hong Xiao, Yan Zhao
Publikováno v:
SPIE Proceedings.
Fabrication of defect free EUV masks including their inspection is the most critical challenge for implementing EUV lithography into semiconductor high volume manufacturing (HVM) beyond 22nm half-pitch (HP) node. The contact to bit-line (CB) layers o
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::720785f374a13725d77021f755f9e6b4
https://doi.org/10.1117/12.879565
https://doi.org/10.1117/12.879565
Autor:
Yan Zhao, Fei Wang, Tsukasa Abe, Chiyan Kuan, Hiroshi Mohri, Naoya Hayashi, Hong Xiao, Takeya Shimomura, Tadahiko Takikawa, Jack Jau, Yuichi Inazuki, Long Ma
Publikováno v:
SPIE Proceedings.
Fabrication of defect free EUV mask is one of the most critical roadblocks for implementing EUV lithography into semiconductor high volume manufacturing for 22nm half-pitch (HP) node and beyond. At the same time, development of quality assurance proc
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::14d6a3eb464daaf6ae9f87828e5b689a
https://doi.org/10.1117/12.868171
https://doi.org/10.1117/12.868171