Zobrazeno 1 - 10
of 14
pro vyhledávání: '"Jack H. Linn"'
Publikováno v:
Applied Surface Science. 125:332-338
Integrated circuit (IC) device structures and metal interconnects have been investigated with atomic force microscopy (AFM). Tapping mode AFM was used to acquire topographical data. The focus of this paper is on the electrostatic interaction between
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::547727c348a7b693df53b0da57bf621a
https://doi.org/10.1016/s0169-4332(97)00456-x
https://doi.org/10.1016/s0169-4332(97)00456-x
Publikováno v:
Journal of The Electrochemical Society. 143:1079-1084
An investigation was conducted to characterize film properties of oxygen-rich tetraethylorthosilicate (TEOS) films deposited by single-wafer plasma-enhanced chemical vapor deposition. By increasing the oxygen :TEOS gas ratio from 1 :1 to 4 :1 and mai
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1e40ebd90d6f3bac2aa35ee776f7d049
https://doi.org/10.1149/1.1836586
https://doi.org/10.1149/1.1836586
Publikováno v:
Journal of The Electrochemical Society. 140:1425-1429
Infrared (IR) external reflection spectra of phosphosilicate glass (PSG) dielectric thin films deposited on undoped silicon wafer substrates were measured at an incident angle of 15 o . The IR reflection spectra of PSG thin films exhibited nonlinear
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c84014ed37f69574068cb13508a267c5
https://doi.org/10.1149/1.2221572
https://doi.org/10.1149/1.2221572
Autor:
Jack H. Linn, W.R. Wade
Publikováno v:
Applied Surface Science. 62:157-165
Seal ring voiding on solder sealed IC packages is discussed. Surface analysis data demonstrates that nickel oxide, which diffuses from an underlying nickel layer during high temperature processing, is a major cause of the seal ring solder voiding. Vo
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::eb3bf130a98704da2cc4f49a13c4be58
https://doi.org/10.1016/0169-4332(92)90141-j
https://doi.org/10.1016/0169-4332(92)90141-j
Publikováno v:
27th Annual Cocoa Beach Conference on Advanced Ceramics and Composites: A: Ceramic Engineering and Science Proceedings
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::734d8c5e64aaaa03395c1364c5b10ea5
https://doi.org/10.1002/9780470294802.ch88
https://doi.org/10.1002/9780470294802.ch88
Publikováno v:
1991 Proceedings 41st Electronic Components & Technology Conference.
Visually acceptable, laser-trimmed nickel-chromium (nichrome) resistors were investigated for electrical stability after microanalysis data showed residual material in the lazed area. Electrical testing indicates that the amount of residual material
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::de9e67a40aca0efb545dabd7be27bafb
https://doi.org/10.1109/ectc.1991.163983
https://doi.org/10.1109/ectc.1991.163983
Autor:
Ron Choma, Subramania Krishnakumar, Catherine Hartford, Jack H. Linn, Greg Moran, Ilya Karpov
Publikováno v:
MRS Proceedings. 500
In this paper, we examine the dopant distributions in 1.8 to 4 micron-thick boron- and phosphorus-doped epitaxial silicon layers. These layers were grown by chemical vapor deposition (CVD) on arsenic-, antimony-, or boron-doped (100)- and (111)-orien
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2e0324d956862a6dd50c19f48140dcc5
https://doi.org/10.1557/proc-500-75
https://doi.org/10.1557/proc-500-75
Autor:
G. Bajor, Jack H. Linn
Publikováno v:
Applied Surface Science. 26:211-218
ESCA and SEM were used to evaluate various gold deposition methods and different backside die preparations on the adhesion of backside gold films. Results indicate that poor die-attachment yield is most likely caused by an intermediate SiO 2 film whi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::05d4b82a469ce0da3967fea197e25775
https://doi.org/10.1016/0169-4332(86)90006-1
https://doi.org/10.1016/0169-4332(86)90006-1
Akademický článek
Tento výsledek nelze pro nepřihlášené uživatele zobrazit.
K zobrazení výsledku je třeba se přihlásit.
K zobrazení výsledku je třeba se přihlásit.