Zobrazeno 1 - 10
of 435
pro vyhledávání: '"Jack C. Lee"'
Publikováno v:
npj 2D Materials and Applications, Vol 6, Iss 1, Pp 1-12 (2022)
Abstract Monolayer molybdenum disulfide has been previously discovered to exhibit non-volatile resistive switching behavior in a vertical metal-insulator-metal structure, featuring ultra-thin sub-nanometer active layer thickness. However, the reliabi
Externí odkaz:
https://doaj.org/article/9bf848e43dd34101b57f7e0dd6b4f08a
Autor:
Yifu Huang, Yuqian Gu, Xiaohan Wu, Ruijing Ge, Yao-Feng Chang, Xiyu Wang, Jiahan Zhang, Deji Akinwande, Jack C. Lee
Publikováno v:
Frontiers in Nanotechnology, Vol 3 (2021)
Resistive random-access memory (RRAM) devices have drawn increasing interest for the simplicity of its structure, low power consumption and applicability to neuromorphic computing. By combining analog computing and data storage at the device level, n
Externí odkaz:
https://doaj.org/article/9afa5e0c0f2444b793a6d66fb61d8136
Autor:
Hanjie Yang, Yang Wang, Xingli Zou, Rongxu Bai, Zecheng Wu, Sheng Han, Tao Chen, Shen Hu, Hao Zhu, Lin Chen, David W. Zhang, Jack C. Lee, Xionggang Lu, Peng Zhou, Qingqing Sun, Edward T. Yu, Deji Akinwande, Li Ji
Publikováno v:
Research, Vol 2021 (2021)
Wafer-scale synthesis of p-type TMD films is critical for its commercialization in next-generation electro/optoelectronics. In this work, wafer-scale intrinsic n-type WS2 films and in situ Nb-doped p-type WS2 films were synthesized through atomic lay
Externí odkaz:
https://doaj.org/article/17f9b1021e6b4716ad09179766412a8e
Autor:
Mostafa Rahimi Azghadi, Ying-Chen Chen, Jason K. Eshraghian, Jia Chen, Chih-Yang Lin, Amirali Amirsoleimani, Adnan Mehonic, Anthony J. Kenyon, Burt Fowler, Jack C. Lee, Yao-Feng Chang
Publikováno v:
Advanced Intelligent Systems, Vol 2, Iss 5, Pp n/a-n/a (2020)
The ever‐increasing processing power demands of digital computers cannot continue to be fulfilled indefinitely unless there is a paradigm shift in computing. Neuromorphic computing, which takes inspiration from the highly parallel, low‐power, hig
Externí odkaz:
https://doaj.org/article/205ef7b996874345886cf99c4dd1ebfd
Publikováno v:
Nature Communications, Vol 9, Iss 1, Pp 1-7 (2018)
The wide application of wireless communications in various technologies calls for the development of robust yet compact radio-frequency switches. Here, Kim et al. utilize MoS2 based non-volatile memristors to switch up to THz frequencies in sub µm2
Externí odkaz:
https://doaj.org/article/ff1fd10a43af4feea2854a446a4acce8
Publikováno v:
AIP Advances, Vol 9, Iss 7, Pp 075119-075119-5 (2019)
In this work, the nonlinear (NL) characteristics of bi-layer high-k/low-k dielectrics structure, i.e. high-k layer with the low-k layer, are for selectorless oxide-based resistive random-access memories (RRAM) memory array application. It has been sh
Externí odkaz:
https://doaj.org/article/8ee2632cb9d24c46a9f562be8e3d9177
Publikováno v:
Applied Sciences, Vol 2, Iss 1, Pp 233-244 (2012)
This paper reports significant improvements in the electrical performance of In0.53Ga0.47As metal-oxide-semiconductor field-effect transistors (MOSFET) by a post-gate CF4/O2 plasma treatment. The optimum condition of CF4/O2 plasma treatment has been
Externí odkaz:
https://doaj.org/article/479f06e2605c434986ee73738b835f20
Publikováno v:
IEEE Transactions on Electron Devices. 70:1676-1681
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::70af3e8583258d985e30394bd70d83e3
https://doi.org/10.1109/ted.2023.3249139
https://doi.org/10.1109/ted.2023.3249139
Autor:
Ying-Chen Chen, Sumant Sarkar, John G. Gibbs, Yifu Huang, Jack C. Lee, Chao-Cheng Lin, Chang-Hsien Lin
Publikováno v:
ACS Applied Engineering Materials. 1:252-257
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::136513d5cfd41c7fa14b57e53f90a413
https://doi.org/10.1021/acsaenm.2c00050
https://doi.org/10.1021/acsaenm.2c00050
Publikováno v:
IEEE Transactions on Electron Devices. 69:6102-6105
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e5a52e1ce70bc4fd8155c6e269a5f98f
https://doi.org/10.1109/ted.2022.3207710
https://doi.org/10.1109/ted.2022.3207710