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pro vyhledávání: '"Jack A. Flat Rock Mandelman"'
Autor:
Jack A. Flat Rock Mandelman
Publikováno v:
IEEE International SOI Conference.
Autor:
W. Wade, S. Ogura, Steven W. Mittl, W. Noble, E. J. Nowak, Jack A. Flat Rock Mandelman, A. Bryant, M. Wordeman, Toshiharu Furukawa
Publikováno v:
27th Annual Proceedings., International Reliability Physics Symposium.
Fully overlapped lightly doped drain FOLD n-channel MOSFETs built for the purpose of improving the tradeoff between performance and reliability are discussed. Full gate overlap was achieved by using angled implants to extend LDD (lightly-doped drain)
Publikováno v:
1991 IEEE International SOI Conference Proceedings.
Various factors for determining body doping for a high performance 0.1- mu m SOI (silicon-on-insulator) MOSFET technology are considered. Long channel constraints on body doping and thickness for assuring full depletion are treated first. Then short
Publikováno v:
1997 IEEE International SOI Conference Proceedings.
To distinguish small differentials in voltage, circuits such as sense amplifiers and SRAM cells require transistors having closely matched electrical characteristics. For example, a mismatch in threshold voltage between cross-coupled NMOSFETs in a se