Zobrazeno 1 - 10
of 165
pro vyhledávání: '"Jacek Lagowski"'
Publikováno v:
Materials Science Forum. 1089:51-56
An increasing interest in the non-contact corona charge-based electrical characterization technique, CnCV, for wide bandgap semiconductors, is justified by the reduction of cost and the reduction of testing feedback time [1]. In addition, the techniq
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f5bcc26e9be0ae811d384891e7a0387c
https://doi.org/10.4028/p-3bn937
https://doi.org/10.4028/p-3bn937
Optimizing Non-Contact Doping and Electrical Defect Metrology for Production of SiC Epitaxial Wafers
Autor:
Vladimir Pushkarev, Tawhid Rana, Matthew Gave, Edward Sanchez, Alexandre Savtchouk, Marshall Wilson, Dmitriy Marinskiy, Jacek Lagowski
Publikováno v:
Solid State Phenomena. 342:99-104
The recently introduced corona charge non-contact capacitance-voltage technique, CnCV, is analyzed considering the production needs of epitaxial SiC wafers. The interfering mechanism of charge dissipation on fresh epitaxial 4H-SiC is identified as su
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::138cfa5d055a0c444342cfb9d2112765
https://doi.org/10.4028/p-bd78p0
https://doi.org/10.4028/p-bd78p0
Autor:
Marshall Wilson, Dmitriy Marinskiy, Alexandre Savtchouk, Carlos Almeida, Bret Schrayer, Jacek Lagowski
Publikováno v:
ECS Transactions. 108:57-62
Purpose of Work Cost savings and short feedback time are significant advantages of the corona non-contact capacitance voltage (CnCV) technique1, recently introduced for wide bandgap SiC, GaN, and AlGaN/GaN as a replacement for C-V measurements on fab
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::efa6aa4a04bb6f52f776d9279b997712
https://doi.org/10.1149/10806.0057ecst
https://doi.org/10.1149/10806.0057ecst
Publikováno v:
Materials Science Forum. 1004:237-242
We report significant advancements in corona-based non-contact capacitance-voltage (CnCV) metrology recently developed for comprehensive C-V characterization of SiC and other wide bandgap semiconductors. The technique answers the industries needs for
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8413dbbdd5e796a7663c6a11bd2d29f5
https://doi.org/10.4028/www.scientific.net/msf.1004.237
https://doi.org/10.4028/www.scientific.net/msf.1004.237
Autor:
Jacek Lagowski, L. Jastrzebski, E. Persson, Damon K. DeBusk, R. Witowski, K. Nauka, M. Dexter, O. Milic, M. Gordon
Publikováno v:
Journal of The Electrochemical Society. 140:1152-1159
This paper presents surface photovoltage (SPV) applications for the monitoring of chemical cleaning and purity of chemicals through mapping of minority carrier diffusion length, Fe concentration in the bulk, and surface contamination (surface charge
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b50a8d955c9e6bb891a361811e2c4b61
https://doi.org/10.1149/1.2056215
https://doi.org/10.1149/1.2056215
Autor:
Dmitriy Marinskiy, Marshall Wilson, Jacek Lagowski, Alexander Savtchouk, Carlos Almeida, Robert Hillard
Publikováno v:
Materials Science Forum. 963:189-193
The non-contact C-V technique has been recently gaining interest as a precise, cost and time effective metrology for wide-bandgap semiconductors. Originally focused on dopant measurement, non-contact C-V has been expanding to encompass wide-bandgap s
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::65f534b556b8b4cfc06457662939e368
https://doi.org/10.4028/www.scientific.net/msf.963.189
https://doi.org/10.4028/www.scientific.net/msf.963.189
Autor:
Marshall Wilson, Dmitriy Marinskiy, Jacek Lagowski, Carlos Almeida, Alexandre Savtchouk, Danh Nguyen, Mark Benjamin
Publikováno v:
Japanese Journal of Applied Physics. 61:020903
We present a charge-assisted sheet resistance technique for noncontact wafer level determination of two-dimensional electron gas (2DEG) mobility versus sheet carrier density without any test structures or gates. Instead, the electrical biasing of the
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3345cc46fecb61c1f2ac992a036300e2
https://doi.org/10.35848/1347-4065/ac41ca
https://doi.org/10.35848/1347-4065/ac41ca
Autor:
Jacek Lagowski, Dmitriy Marinskiy
Publikováno v:
ECS Transactions. 85:97-104
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::af540f3451b4e325b7d8295cf856f044
https://doi.org/10.1149/08506.0097ecst
https://doi.org/10.1149/08506.0097ecst
Autor:
Alexandre Savtchouk, John D'Amico, Robert Hillard, Marshall Wilson, Andrew Findlay, Jacek Lagowski
Publikováno v:
ECS Transactions. 80:261-274
Development of semiconductor devices and control of the manufacturing process require cost effective metrology with rapid feedback to pilot or manufacturing lines. In this respect, silicon IC’s have been benefiting from inventions (by IBM, Fishkill
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::8806be4837a4858340432643070cca76
https://doi.org/10.1149/08007.0261ecst
https://doi.org/10.1149/08007.0261ecst
Publikováno v:
Materials Science Forum. 897:139-142
In this work we present novel photo-assisted characterization of dielectric interfaces in SiC using a modified non-contact corona-Kelvin technique. This technique eliminates the cost and time associated with fabrication of electrical test structures.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::03d19171ef2c8d99cff69c879f698f58
https://doi.org/10.4028/www.scientific.net/msf.897.139
https://doi.org/10.4028/www.scientific.net/msf.897.139