Zobrazeno 1 - 10
of 10
pro vyhledávání: '"Jacek Kepa"'
Autor:
Oreste Madia, Andriy Hikavyy, J. Franco, Andre Stesmans, Valery V. Afanas'ev, B. Kaczer, Jacek Kepa
© 2019, Springer Science+Business Media, LLC, part of Springer Nature. Dangling bond defects (DBs) in silicon-passivated (1- or 3-nm thick Si cap) strained-(100)Si 1−x Ge x (x = 0.25–0.55) layers at interfaces with 1.8-nm thick HfO 2 gate dielec
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::4552f17cb56646db0e8fc40a977234f6
https://lirias.kuleuven.be/handle/123456789/635402
https://lirias.kuleuven.be/handle/123456789/635402
Publikováno v:
physica status solidi (b). 251:2193-2196
In this work we analyse the influence of the O-scavenging process on interface traps in (100)Si/SiOx/HfO2(1.8 nm)/TiNx/Si stacks by using electrical measurements and electron spin resonance spectroscopy. The reduction of interfacial SiOx by high-temp
Publikováno v:
Energy Procedia. 44:16-22
Silicon thin (< 100μm) foils for photovoltaic applications have been fabricated using a novel low-temperature (< 150°C) lift- off process with the aim of reducing production costs. The quality of the resulting material has been assessed by electron
Autor:
Patrick Wagner, W.H. Wilson Tang, Jan Vercammen, Jacek Kepa, Philippe De Vusser, Pieter M. Vandervoort, Mathias Vrolix, Joseph Dens, Wilfried Mullens, Maximo Rivero-Ayerza
Publikováno v:
The American Journal of Cardiology. 108:409-415
Despite improvement in morbidity and mortality with cardiac resynchronization therapy (CRT), disease progression continues to affect a subset of patients and there is limited effort to identify contributing factors. Our objective was to investigate i
Autor:
Valeri Afanas'ev, Andre Stesmans, Jeroen Drijkoningen, Jean Manca, Jan D'Haen, Maria Batuk, Jef Poortmans, Marie Buffiere, Samira Khelifi, Armin Esmaeil Zaghi, Nick Lenaers, Jonathan Hamon, Jef Vleugels, Jan Hadermann, Marc Meuris, Jacek Kepa
Publikováno v:
The journal of physical chemistry: C : nanomaterials and interfaces
Printed chalcopyrite thin films have attracted considerable attention in recent years due to their potential in the high-throughput production of photovoltaic devices. To improve the homogeneity of printed CuInSe2 (CISe) layers, chemical additives su
Publikováno v:
Semiconductor Science and Technology. 30:115015
Within the context of reducing production costs, thin (
Autor:
Mario Gonzalez, Jacek Kepa, Ivan Gordon, Roberto Martini, Maarten Debucquoy, Jozef Poortmans, Valerie Depauw, Andre Stesmans
Publikováno v:
Applied Physics Letters. 105:173906
We report on the drastic improvement of the quality of thin silicon foils produced by epoxy-induced spalling. In the past, researchers have proposed to fabricate silicon foils by spalling silicon substrates with different stress-inducing materials to
Publikováno v:
Applied Physics Letters. 102:122104
The thermal stability under isochronal annealing of the GeSi/SiO2 interfaces in the condensation grown silicon-germanium-on-insulator (100)Si/SiO2/Ge0.75S0.25/SiO2 structure has been assessed by electron spin resonance in terms of occurring interface
Defects in Si foils fabricated by spalling at low temperature: electrical activity and atomic nature
Publikováno v:
Journal of Physics D: Applied Physics
Silicon foils are fabricated using a low-temperature (
Autor:
Jacek Kępa
Publikováno v:
Przestrzenie Teorii, Iss 24, Pp 295-325 (2015)
The work entitled “Reflections of an Unpolitical Man”, written during World War I, includes an essay against the Western states. Thomas Mann compares democratic countries and the societies created after the French Revolution with the German conce
Externí odkaz:
https://doaj.org/article/b20fa509649b44ddb47decc580a72afb