Zobrazeno 1 - 4
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pro vyhledávání: '"Jacek Brona"'
Publikováno v:
Surface Science. 604:424-427
Alternating deposition of Ge and Si in the step-flow growth regime using Bi acting as a surfactant can lead to a spontaneous formation of one atomic layer deep pits in the area of surface covered by Ge. During Si growth Ge atoms of the epitaxial 2D G
Autor:
Hidehito Asaoka, S. N. Filimonov, Vasily Cherepanov, Bert Voigtländer, Jacek Brona, Neelima Paul
Publikováno v:
Surface Science. 599:76-84
Surface undulations induced by interfacial misfit dislocations in the Ge/Si(1 1 1) films grown by conventional molecular beam epitaxy and by surfactant-mediated epitaxy with Bi as a surfactant have been analyzed using scanning tunnelling microscopy a
Publikováno v:
Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films. 23:1535-1537
For the fabrication of small metal bead crystals a gas flame is used to melt a wire forming a liquid droplet which solidifies upon cooling into a single crystal metal bead. Due to oxidation under ambient conditions bead crystals can be formed only fr
Publikováno v:
Physical review letters 103, 096101 (2009). doi:10.1103/PhysRevLett.103.096101
The structural stability of two-dimensional (2D) SiGe nanostructures is studied by scanning tunneling microscopy. The formation of pits with a diameter of 2-30 nm in one atomic layer thick Ge stripes is observed. The unanticipated pit formation occur