Zobrazeno 1 - 10
of 38
pro vyhledávání: '"Ja-Yong Kim"'
Autor:
Dong Ik Suh, Won-Tae Koo, Youngmo Kim, Ja-Yong Kim, Seung Wook Ryu, Heeyoung Jeon, Ki Vin Im, Gwangyeob Lee, Taeone Youn, Hyeonho Jeong, Seho Lee, Myung-Hee Na, Seon Yong Cha
Publikováno v:
2023 7th IEEE Electron Devices Technology & Manufacturing Conference (EDTM).
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3a1efd0b90f47471c08fe8fa689b091e
https://doi.org/10.1109/edtm55494.2023.10102993
https://doi.org/10.1109/edtm55494.2023.10102993
Publikováno v:
Current Applied Physics. 16:638-643
Carbon-impurity effects on electronic structures and oxygen-vacancy formation stability of Ta2O5 resistive memories are investigated using the density-functional theory. Generalized gradient approximation with on-site Coulomb corrections is employed
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2ec3696086f3e165860256d4b74c7874
https://doi.org/10.1016/j.cap.2016.03.014
https://doi.org/10.1016/j.cap.2016.03.014
Autor:
Dong-Kwon Lee, Sang-Deok Kim, Han-Bo-Ram Lee, Zhixin Wan, Ja-Yong Kim, Jong-Seong Bae, Ji-Hoon Ahn, Se-Hun Kwon
Publikováno v:
Materials Letters. 166:163-166
SnO 2 thin films were deposited by plasma-enhanced atomic layer deposition (PEALD) using SnCl 4 and O 2 plasma at the temperature between 150 and 350 °C. The self-limiting growth of PEALD-SnO 2 was confirmed by a careful study of the growth kinetics
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3212fb4c4e287b5912bc9ebcdcf11c07
https://doi.org/10.1016/j.matlet.2015.12.049
https://doi.org/10.1016/j.matlet.2015.12.049
Autor:
Ji-Hoon Ahn, Ja-Yong Kim
Publikováno v:
Microelectronic Engineering. 149:62-65
In this study, we investigated the effect of annealing conditions on the formation of SrRuO3 films by the interfacial reaction of SrO/RuO2 bi-layer films. We found that the annealing temperature and thickness of the SrO layer along with the annealing
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::662e206894dd532710b9dea5e80499d2
https://doi.org/10.1016/j.mee.2015.09.015
https://doi.org/10.1016/j.mee.2015.09.015
Publikováno v:
Materials Research Bulletin. 64:1-5
The effect of Al 2 O 3 insertion on the electrical properties of SrTiO 3 films is systemically investigated in metal–insulator–metal (MIM) capacitor because SrTiO 3 films with a high dielectric constant generally suffer from high leakage current
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c7c1f1932bf5c3bf7ed6f014d21c99fd
https://doi.org/10.1016/j.materresbull.2014.12.012
https://doi.org/10.1016/j.materresbull.2014.12.012
Publikováno v:
physica status solidi (RRL) - Rapid Research Letters. 8:560-565
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::bdc237042089781fe9fec39d38bcead1
https://doi.org/10.1002/pssr.201409018
https://doi.org/10.1002/pssr.201409018
Publikováno v:
Journal of Applied Physics; 5/1/2005, Vol. 97 Issue 9, p093505, 5p, 2 Diagrams, 3 Graphs
Publikováno v:
Current Applied Physics. 12:S160-S163
Thermal stability of RuO2 thin films formed by modified atomic layer deposition on SiO2 substrate was investigated. Rapid thermal annealing was conducted for 2 min under NH3 and N2 ambient. It was demonstrated that NH3 gas can completely reduce RuO2
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e371107f5d14bcbe71c8df4f321fff2a
https://doi.org/10.1016/j.cap.2012.02.050
https://doi.org/10.1016/j.cap.2012.02.050
Autor:
Jae-Sung Roh, Ji-Hoon Ahn, Jin-Hyock Kim, Sungki Park, Deok-Sin Kil, Ja-Yong Kim, Se-Hun Kwon
Publikováno v:
Journal of The Electrochemical Society. 159:H560-H564
Ru films were produced by atomic layer deposition (ALD) with an alternating supply of bis(ethylcyclopentadienyl)ruthenium (Ru(EtCp)2) and ozone at deposition temperatures of 225‐275 ◦ C. Ozone acted as an effective reactant for Ru(EtCp)2 .T he Ru
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::64d4d2f62317eb90a0f11ca1aa9e98e5
https://doi.org/10.1149/2.069206jes
https://doi.org/10.1149/2.069206jes
Autor:
M. S. Joo, J. S. Roh, W. G. Kim, S. J. Kim, T. O. Youn, S. K. Park, Ja-Yong Kim, J.N. Kim, J. H. Yoo
Publikováno v:
ECS Transactions. 35:245-248
It has been investigated HfO2 crystallinity depending on the crystallinity of under layer electrode material and its effect on device characteristics and reliability for ReRAM. HfO2 on TiN electrode, which has a polycrystalline structure, shows the d
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::7a756997821c23d2188bc2310eff562c
https://doi.org/10.1149/1.3568866
https://doi.org/10.1149/1.3568866