Zobrazeno 1 - 10
of 32
pro vyhledávání: '"Ja Hyung Han"'
Autor:
Jihoon Seo, Suryadevara V. Babu, S. S. R. K. Hanup Vegi, C. K. Ranaweera, Ja-Hyung Han, N. K. Baradanahalli, Dinesh Koli
Publikováno v:
ECS Journal of Solid State Science and Technology. 8:P3009-P3017
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e78d725024be7206259d2dda28114276
https://doi.org/10.1149/2.0011905jss
https://doi.org/10.1149/2.0011905jss
Publikováno v:
ECS Journal of Solid State Science and Technology. 7:P693-P697
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a046c25374f131d2cc0aa955548e9de7
https://doi.org/10.1149/2.0291811jss
https://doi.org/10.1149/2.0291811jss
Publikováno v:
ECS Journal of Solid State Science and Technology. 7:P175-P179
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3d1354414c31146a67ed08eaf39139d2
https://doi.org/10.1149/2.0111804jss
https://doi.org/10.1149/2.0111804jss
Autor:
Ja-Hyung Han, Charan V. V. S. Surisetty, C. Labelle, H. P. Amanapu, Dinesh Koli, Stan D. Tsai, John H. Zhang, Kisup Chung, Haigou Huang, Ruilong Xie
Publikováno v:
ECS Transactions. 77:169-177
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4320100fdbc463aa67b4412f0ef81dd6
https://doi.org/10.1149/07704.0169ecst
https://doi.org/10.1149/07704.0169ecst
Publikováno v:
ECS Journal of Solid State Science and Technology. 6:P101-P104
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c20ea30a52fe2ddadb9fc15ebbe3623d
https://doi.org/10.1149/2.0021704jss
https://doi.org/10.1149/2.0021704jss
Publikováno v:
ECS Transactions. 72:73-80
Chemical mechanical polishing (CMP) becomes a major process in IC integration as gate length shrinkage. Moreover, its usage becomes wider at sub-14nm device manufacturing due to new structure and new material introduction. Enabling new material for p
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f7d35f1da9d1a65a73d7fdce5c251427
https://doi.org/10.1149/07218.0073ecst
https://doi.org/10.1149/07218.0073ecst
Publikováno v:
2018 29th Annual SEMI Advanced Semiconductor Manufacturing Conference (ASMC).
Tungsten currently drives middle of line (MOL) metal interconnection for semiconductor manufacturing and chemical mechanical polishing (CMP) has become the process standard for controlling tungsten metal interconnection. Although tungsten CMP has bro
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::055a439a7ebe34ded5efbbce18c98359
https://doi.org/10.1109/asmc.2018.8373140
https://doi.org/10.1109/asmc.2018.8373140
Autor:
Changhong Wu, Ja-Hyung Han, Wei-Tsu Tseng, Hong Lin, Yanni Wang, Dinesh Koli, James Aloysius Hagan
Publikováno v:
2017 IEEE International Interconnect Technology Conference (IITC).
Microreplicated CMP pad is applied to W and Co buff CMP steps for topography and WiDNU reduction of RMG and MOL metallization. This new pad exhibits stable rates and low defectivity over extended life time without the need for diamond conditioner. It
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3b9cf375fc0c7e1ba450e41bc787eb86
https://doi.org/10.1109/iitc-amc.2017.7968954
https://doi.org/10.1109/iitc-amc.2017.7968954
Publikováno v:
2017 China Semiconductor Technology International Conference (CSTIC).
In this study, new SiOC Chemical Mechanical Planarization (CMP) process is fully developed with the characterization of the blanket wafer selectivity, SiN loss on pattern wafer, within chip SiN uniformity, and topography of CMP house and device areas
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a5bd4df70776b3fab3752078668c8f62
https://doi.org/10.1109/cstic.2017.7919826
https://doi.org/10.1109/cstic.2017.7919826
Autor:
Byung Lyul Park, Ja Hyung Han, Young Jae Kang, Ja Eung Koo, Kyo Se Choi, Sun Yong Lee, Sang Rok Hah, Jin-Goo Park, Ju Hyuk Chung
Publikováno v:
Solid State Phenomena. 134:295-298
The prevention of watermark defect after copper/low-k CMP is a critical barrier for the successful integration of sub-100 nm devices. The water-mark can act as a leakage source and cause electrical shorts. The mechanism of water-mark formation during
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1584d14d1e729c76e6bef3316b39d154
https://doi.org/10.4028/www.scientific.net/ssp.134.295
https://doi.org/10.4028/www.scientific.net/ssp.134.295