Zobrazeno 1 - 10
of 1 404
pro vyhledávání: '"JX Chen"'
Autor:
W Bedyk, Wlodzimierz Nakwaski, Maria Teresa Todaro, R. P. Stanley, Marek Osinski, Adriana Passaseo, Michał Wasiak, de M Vittorio, P. Maćkowiak, JX Chen, R Joray, Vittorianna Tasco, Andrea Fiore
Publikováno v:
Semiconductor science and technology (Online) 19 (2004): 333–341. doi:10.1088/0268-1242/19/3/007
info:cnr-pdr/source/autori:W. Nakwaski; M. Wasiak; P. Ma?kowiak; W. Bedyk; M. Osi?ski; A. Passaseo; V. Tasco; M. T. Todaro; M. De Vittorio; R. Joray; J. X. Chen; R. P. Stanley; A. Fiore/titolo:Oxidation kinetics of AlAs and (AlGa)As layers in GaAs-based diode laser structures: comparative analysis of available experimental data/doi:10.1088%2F0268-1242%2F19%2F3%2F007/rivista:Semiconductor science and technology (Online)/anno:2004/pagina_da:333/pagina_a:341/intervallo_pagine:333–341/volume:19
Semiconductor science and technology
19 (2003): 333.
info:cnr-pdr/source/autori:Nakwaski W.; Wasiak M.; Mackowiak P.; Bedyk W. ; Osinski M.; Passaseo A.; Tasco V.;Todaro M.T. ; De Vittorio M.; Joray R. ; Chen J.X.; Stanley R.P.; Fiore A./titolo:Oxidation kinetics of AlAs and (AlGa)As layers in GaAs-based diode laser structures: comparative analysis of available experimental data./doi:/rivista:Semiconductor science and technology (Print)/anno:2003/pagina_da:333/pagina_a:/intervallo_pagine:333/volume:19
Semiconductor Science and Technology, 19(3), 333-341. Institute of Physics
info:cnr-pdr/source/autori:W. Nakwaski; M. Wasiak; P. Ma?kowiak; W. Bedyk; M. Osi?ski; A. Passaseo; V. Tasco; M. T. Todaro; M. De Vittorio; R. Joray; J. X. Chen; R. P. Stanley; A. Fiore/titolo:Oxidation kinetics of AlAs and (AlGa)As layers in GaAs-based diode laser structures: comparative analysis of available experimental data/doi:10.1088%2F0268-1242%2F19%2F3%2F007/rivista:Semiconductor science and technology (Online)/anno:2004/pagina_da:333/pagina_a:341/intervallo_pagine:333–341/volume:19
Semiconductor science and technology
19 (2003): 333.
info:cnr-pdr/source/autori:Nakwaski W.; Wasiak M.; Mackowiak P.; Bedyk W. ; Osinski M.; Passaseo A.; Tasco V.;Todaro M.T. ; De Vittorio M.; Joray R. ; Chen J.X.; Stanley R.P.; Fiore A./titolo:Oxidation kinetics of AlAs and (AlGa)As layers in GaAs-based diode laser structures: comparative analysis of available experimental data./doi:/rivista:Semiconductor science and technology (Print)/anno:2003/pagina_da:333/pagina_a:/intervallo_pagine:333/volume:19
Semiconductor Science and Technology, 19(3), 333-341. Institute of Physics
An understanding of the kinetics of the steam oxidation of AlAs and (AlGa)As layers is crucial to maintain good control of the process of manufacturing modern GaAs-based diode microresonator vertical-cavity surface-emitting lasers (VCSELs). Mathemati
Tuning InAs/GaAs quantum dot properties under Stranski-Krastanov growth mode for 1.3 µm applications
Autor:
L. Lazzarini, J. Katcki, Massimo Catalano, J. Ratajczak, M. Ilegems, Roberto Cingolani, Romuald Houdré, Andrea Fiore, Lucia Nasi, Ursula Oesterle, R. P. Stanley, Mt Todaro, Emanuela Piscopiello, JX Chen, Jf Carlin, A. Markus
Publikováno v:
Journal of Applied Physics, 91(10, Pt. 1), 6710-6716. American Institute of Physics
Journal of applied physics 91 (2002): 6710–6716. doi:10.1063/1.1476069
info:cnr-pdr/source/autori:JX Chen, A Fiore, U Oesterle, A Markus, RP Stanley, R Houdrè, M Ilegems, L Lazzarini, L Nasi, MT Todaro, E Piscopiello, M Catalano, R Cingolani, J Katcki, J Ratajczak/titolo:Tuning InAs%2FGaAs quantum dot properties under Stranski-Krastanov growth mode for 1.3 mu m applications/doi:10.1063%2F1.1476069/rivista:Journal of applied physics/anno:2002/pagina_da:6710/pagina_a:6716/intervallo_pagine:6710–6716/volume:91
Journal of applied physics 91 (2002): 6710–6716. doi:10.1063/1.1476069
info:cnr-pdr/source/autori:JX Chen, A Fiore, U Oesterle, A Markus, RP Stanley, R Houdrè, M Ilegems, L Lazzarini, L Nasi, MT Todaro, E Piscopiello, M Catalano, R Cingolani, J Katcki, J Ratajczak/titolo:Tuning InAs%2FGaAs quantum dot properties under Stranski-Krastanov growth mode for 1.3 mu m applications/doi:10.1063%2F1.1476069/rivista:Journal of applied physics/anno:2002/pagina_da:6710/pagina_a:6716/intervallo_pagine:6710–6716/volume:91
In this paper, we present a systematic study of the effect of growth parameters on the structural and optical properties of InAs quantum dot (QD) grown under Stranski-Krastanov mode by molecular beam epitaxy. The dot density is significantly reduced
Publikováno v:
Applied Physics Letters, 81(10), 1756-1758. American Institute of Physics
We introduce a device structure and a fabrication technique that allow the realization of efficient light-emitting diodes (LEDs) with dimensions of the active area in the 100 nm range. Using optical lithography, selective oxidation, and an active reg
Autor:
JX Chen, A. Markus, Jg-G. Provost, Beatrice Dagens, Andrea Fiore, Jean Landreau, Dalila Make, O. Le Gouezigou, B. Thedrez
Publikováno v:
Electronics Letters, 41(6), 323-324. Institution of Engineering and Technology (IET)
Electronics Letters
Electronics Letters, IET, 2005, 41 (6), pp.323-324. ⟨10.1049/el:20057956⟩
Electronics Letters
Electronics Letters, IET, 2005, 41 (6), pp.323-324. ⟨10.1049/el:20057956⟩
International audience; Giant effective linewidth enhancement factors, close to 60, are measured on a quantum dot laser under specific biasing conditions. Consequently, 2.5 Gbit=s purely frequency modulated signal is obtained by direct current modula
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::8ff85e8906a7ca267e728a24e01c7934
https://research.tue.nl/nl/publications/69f3ac89-8aad-472b-87d7-c4474f963e32
https://research.tue.nl/nl/publications/69f3ac89-8aad-472b-87d7-c4474f963e32
Publikováno v:
Journal of applied physics 98 (2005): 104506.
info:cnr-pdr/source/autori:A. Markus, M. Rossetti, V. Calligari, J.X. Chen and A. Fiore/titolo:Role of thermal hopping and homogeneous broadening on the spectral characteristics of quantum dot lasers/doi:/rivista:Journal of applied physics/anno:2005/pagina_da:104506/pagina_a:/intervallo_pagine:104506/volume:98
Journal of Applied Physics, 98(10):104506, 104506-1/8. American Institute of Physics
info:cnr-pdr/source/autori:A. Markus, M. Rossetti, V. Calligari, J.X. Chen and A. Fiore/titolo:Role of thermal hopping and homogeneous broadening on the spectral characteristics of quantum dot lasers/doi:/rivista:Journal of applied physics/anno:2005/pagina_da:104506/pagina_a:/intervallo_pagine:104506/volume:98
Journal of Applied Physics, 98(10):104506, 104506-1/8. American Institute of Physics
The effect of thermal hopping and homogeneous broadening on the lasing spectra and carrier distribution in quantum dot lasers is investigated by measuring the spontaneous emission spectra through a top-contact window. Two intriguing features are obse
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::f27b73f43f4afbc7bc98daa2efed569b
http://www.cnr.it/prodotto/i/24868
http://www.cnr.it/prodotto/i/24868
Autor:
Maria Teresa Todaro, de M Vittorio, Iolena Tarantini, A. Markus, de M Giorgi, Antonietta Taurino, Adriana Passaseo, Cyril Paranthoen, M. Ilegems, Massimo Catalano, Andrea Fiore, JX Chen, Ursula Oesterle, R. Cingolani
Publikováno v:
Applied physics letters 82 (2003): 3632–3634. doi:10.1063/1.1578182
info:cnr-pdr/source/autori:A. Passaseo, M. De Vittorio, M.T. Todaro, I. Tarantini, M. De Giorgi, R. Cingolani, A. Taurino, M. Catalano, A. Fiore, A. Markus, J.X. Chen, C. Paranthoen, U. Oesterle, M. Ilegems/titolo:Comparison of radiative and structural properties of 1.3 mu m InxGa(1-x)As quantum-dot laser structures grown by metalorganic chemical vapor deposition and molecular-beam epitaxy: Effect on the lasing properties/doi:10.1063%2F1.1578182/rivista:Applied physics letters/anno:2003/pagina_da:3632/pagina_a:3634/intervallo_pagine:3632–3634/volume:82
Applied physics letters 82 (2003).
info:cnr-pdr/source/autori:Passaseo A, De Vittorio M, Todaro MT, Tarantini I, De Giorgi M, Cingolani R, Taurino A, Catalano M, Fiore A, Markus A, Chen JX, Paranthoen C, Oesterle U, Ilegems M/titolo:Comparison of radiative and structural properties of 1.3 mu m InxGa(1-x)As quantum-dot laser structures grown by metalorganic chemical vapor deposition and molecular-beam epitaxy: Effect on the lasing properties/doi:/rivista:Applied physics letters/anno:2003/pagina_da:/pagina_a:/intervallo_pagine:/volume:82
Applied Physics Letters, 82(21), 3632-3634. American Institute of Physics
info:cnr-pdr/source/autori:A. Passaseo, M. De Vittorio, M.T. Todaro, I. Tarantini, M. De Giorgi, R. Cingolani, A. Taurino, M. Catalano, A. Fiore, A. Markus, J.X. Chen, C. Paranthoen, U. Oesterle, M. Ilegems/titolo:Comparison of radiative and structural properties of 1.3 mu m InxGa(1-x)As quantum-dot laser structures grown by metalorganic chemical vapor deposition and molecular-beam epitaxy: Effect on the lasing properties/doi:10.1063%2F1.1578182/rivista:Applied physics letters/anno:2003/pagina_da:3632/pagina_a:3634/intervallo_pagine:3632–3634/volume:82
Applied physics letters 82 (2003).
info:cnr-pdr/source/autori:Passaseo A, De Vittorio M, Todaro MT, Tarantini I, De Giorgi M, Cingolani R, Taurino A, Catalano M, Fiore A, Markus A, Chen JX, Paranthoen C, Oesterle U, Ilegems M/titolo:Comparison of radiative and structural properties of 1.3 mu m InxGa(1-x)As quantum-dot laser structures grown by metalorganic chemical vapor deposition and molecular-beam epitaxy: Effect on the lasing properties/doi:/rivista:Applied physics letters/anno:2003/pagina_da:/pagina_a:/intervallo_pagine:/volume:82
Applied Physics Letters, 82(21), 3632-3634. American Institute of Physics
We have studied the radiative and structural properties of identical InxGa(1-x) As quantum dot laser structures grown by metalorganic chemical vapor deposition (MOCVD) and molecular beam epitaxy (MBE). Despite the comparable emission properties found
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::548b4305e3299a0a4a7bf87c6a91a6df
https://hdl.handle.net/11587/300814
https://hdl.handle.net/11587/300814
Publikováno v:
Materials Chemistry and Physics, 81(2-3), 244-248. Elsevier
Materials chemistry and physics
81 (2003): 244.
info:cnr-pdr/source/autori:Katcki J.; Ratajczak J.; Phillipp F.; Muszalski J.; Bugajski M.; Chen J.X.; Fiore A./titolo:Electron microscopy study of advanced heterostructures for optoelectronics./doi:/rivista:Materials chemistry and physics (Print)/anno:2003/pagina_da:244/pagina_a:/intervallo_pagine:244/volume:81
Materials chemistry and physics
81 (2003): 244.
info:cnr-pdr/source/autori:Katcki J.; Ratajczak J.; Phillipp F.; Muszalski J.; Bugajski M.; Chen J.X.; Fiore A./titolo:Electron microscopy study of advanced heterostructures for optoelectronics./doi:/rivista:Materials chemistry and physics (Print)/anno:2003/pagina_da:244/pagina_a:/intervallo_pagine:244/volume:81
The application of cross-sectional transmission electron microscopy and scanning electron microscopy to the investigation of optoelectronic devices are reviewed. Special attention was paid to the electron microscopy assessment of the growth perfectio
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::579d718ee404b7540021e68219bbf830
https://research.tue.nl/nl/publications/f8f8c5ef-0dc3-4609-bbe0-bee0d55f3649
https://research.tue.nl/nl/publications/f8f8c5ef-0dc3-4609-bbe0-bee0d55f3649
Autor:
A. Markus, M. Ilegems, Jean-Daniel Ganière, Henning Riechert, Benoit Deveaud, Andrea Fiore, JX Chen, Ursula Oesterle
Publikováno v:
Applied Physics Letters, 80(6), 911-913. American Institute of Physics
The emission properties of self-assembled InAs quantum dots (QDs) and lattice-matched GaInNAs quantum wells (QWs) emitting around 1.3 micro m were studied by temp.-dependent and time-resolved photoluminescence (PL). The QDs have much higher PL effici
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::233bbbf2c738b235c0f59f0661c43459
https://research.tue.nl/nl/publications/12b34d34-99b3-41a4-870d-b3fb107a0fc5
https://research.tue.nl/nl/publications/12b34d34-99b3-41a4-870d-b3fb107a0fc5
Publikováno v:
Indian Journal of Cancer. 51:110
Colorectal carcinoma is one of most diagnosed solid malignant carcinoma. The chemotherapy combined with target drugs in the treatment of advanced colorectal cancer in not conclusive.The clinical studies reporting the activity and adverse events betwe
Publikováno v:
Plastic and Reconstructive Surgery. 127:20