Zobrazeno 1 - 10
of 89
pro vyhledávání: '"JOHN L. VOSSEN"'
Autor:
Fehr, Edith B.
Publikováno v:
American Scientist, 1979 Jul 01. 67(4), 472-473.
Externí odkaz:
https://www.jstor.org/stable/27849348
Physics of Thin Films: Advances in Research and Development, Volume 12 reviews advances that have been made in research and development concerning the physics of thin films. This volume covers a wide range of preparative approaches, physics phenomena
Autor:
Werner Kern, John L. Vossen
Publikováno v:
Physics Today. 33:26-33
The enormous number of successful applications of thin films for a large variety of scientific, engineering and industrial purposes is in large measure due to the rapidly increasing scientific understanding of the nature of the processes used to depo
Publikováno v:
Journal of Vacuum Science and Technology. 14:1053-1063
Techniques for forming dielectric layers for fabricating semiconductor components are reviewed, including (1) low‐pressure techniques: evaporation, sputtering, plasma deposition, and low‐pressure CVD, (2) techniques operating at one atmosphere to
Publikováno v:
11th Reliability Physics Symposium.
Improper coverage of surface topography can lead to a variety of reliability and yield problems in electron devices. The nature of coverage defects and failure mechanisms is discussed, and techniques for improving the reliability by chemical tapering
Autor:
John L. Vossen
Publikováno v:
Journal of Vacuum Science and Technology. 13:651-652